Advanced Optoelectronic Devices for Neuromorphic Analog Based on Low-Dimensional Semiconductors

被引:54
|
作者
Wang, Xiaoyu [1 ,2 ]
Zong, Yixin [3 ]
Liu, Duanyang [1 ]
Yang, Juehan [1 ,2 ]
Wei, Zhongming [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Bur Frontier Sci & Educ, Beijing 100864, Peoples R China
基金
中国国家自然科学基金; 北京市自然科学基金;
关键词
artificial synapses; low dimensional materials; memristors; neuromorphic devices; optoelectronic devices; MEMORY; MEMRISTOR; SYNAPSE; LOGIC; TRANSISTORS; BEHAVIOR;
D O I
10.1002/adfm.202213894
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Neuromorphic systems can parallelize the perception and computation of information, making it possible to break through the von Neumann bottleneck. Neuromorphic engineering has been developed over a long period of time based on Hebbian learning rules. The optoelectronic neuromorphic analog device combines the advantages of electricity and optics, and can simulate the biological visual system, which has a very strong development potential. Low-dimensional materials play a very important role in the field of optoelectronic neuromorphic devices due to their flexible bandgap tuning mechanism and strong light-matter coupling efficiency. This review introduces the basic synaptic plasticity of neuromorphic devices. According to the different number of terminals, two-terminal neuromorphic memristors, three-terminal neuromorphic transistors and artificial visual system are introduced from the aspects of the action mechanism and device structure. Finally, the development prospect of optoelectronic neuromorphic analog devices based on low-dimensional materials is prospected.
引用
收藏
页数:18
相关论文
共 50 条
  • [31] Some new synthetic low-dimensional semiconductors based on inorganic units
    Papavassiliou, GC
    Mousdis, GA
    Koutselas, I
    Raptopoulou, CP
    Terzis, A
    Kanatzidis, MG
    Axtell, EA
    ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, 1998, 8 (05): : 263 - 267
  • [32] Quantum stirring in low-dimensional devices
    Sela, Itamar
    Cohen, Doron
    PHYSICAL REVIEW B, 2008, 77 (24):
  • [33] Antimonide-based Semiconductors for Optoelectronic Devices
    Ni, Pei-Nan
    Tong, Jin-Chao
    Tobing, Landobasa Y. M.
    Qian, Li
    Qiu, Shu-Peng
    Xu, Zheng-Ji
    Tang, Xiao-Hong
    Zhang, Dao-Hua
    2016 15TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN), 2016,
  • [34] Dimensional and correlation effects of charged excitons in low-dimensional semiconductors
    Ronnow, Troels F.
    Pedersen, Thomas G.
    Cornean, Horia D.
    JOURNAL OF PHYSICS A-MATHEMATICAL AND THEORETICAL, 2010, 43 (47)
  • [35] Low-dimensional nanomaterials based on small organic molecules: Preparation and optoelectronic properties
    Zhao, Yong Sheng
    Fu, Hongbing
    Peng, Aidong
    Ma, Ying
    Xiao, Debao
    Yao, Jiannian
    ADVANCED MATERIALS, 2008, 20 (15) : 2859 - 2876
  • [36] Optical and optoelectronic neuromorphic devices based on emerging memory technologies
    Shen, Jiabin
    Cheng, Zengguang
    Zhou, Peng
    NANOTECHNOLOGY, 2022, 33 (37)
  • [37] Femtosecond spectroscopy of hot carriers in low-dimensional semiconductors
    Woerner, M
    Lutgen, S
    Kaindl, R
    Elsaesser, T
    Hase, A
    Kunzel, H
    ULTRAFAST PROCESSES IN SPECTROSCOPY, 1996, : 249 - 253
  • [38] DYNAMIC LOCALIZATION IN 2 LOW-DIMENSIONAL SYNTHETIC SEMICONDUCTORS
    KRAMER, GJ
    BROM, HB
    SYNTHETIC METALS, 1988, 27 (1-2) : A133 - A138
  • [39] Inelastic light scattering by electrons in low-dimensional semiconductors
    Pinczuk, A
    Dennis, BS
    Pfeiffer, LN
    West, KW
    Pellegrini, V
    Plaut, AS
    OPTICAL SPECTROSCOPY OF LOW DIMENSIONAL SEMICONDUCTORS, 1997, 344 : 63 - 82
  • [40] Electronic properties and phase transitions in low-dimensional semiconductors
    Panich, A. M.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (29)