Advanced Optoelectronic Devices for Neuromorphic Analog Based on Low-Dimensional Semiconductors

被引:54
|
作者
Wang, Xiaoyu [1 ,2 ]
Zong, Yixin [3 ]
Liu, Duanyang [1 ]
Yang, Juehan [1 ,2 ]
Wei, Zhongming [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Bur Frontier Sci & Educ, Beijing 100864, Peoples R China
基金
中国国家自然科学基金; 北京市自然科学基金;
关键词
artificial synapses; low dimensional materials; memristors; neuromorphic devices; optoelectronic devices; MEMORY; MEMRISTOR; SYNAPSE; LOGIC; TRANSISTORS; BEHAVIOR;
D O I
10.1002/adfm.202213894
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Neuromorphic systems can parallelize the perception and computation of information, making it possible to break through the von Neumann bottleneck. Neuromorphic engineering has been developed over a long period of time based on Hebbian learning rules. The optoelectronic neuromorphic analog device combines the advantages of electricity and optics, and can simulate the biological visual system, which has a very strong development potential. Low-dimensional materials play a very important role in the field of optoelectronic neuromorphic devices due to their flexible bandgap tuning mechanism and strong light-matter coupling efficiency. This review introduces the basic synaptic plasticity of neuromorphic devices. According to the different number of terminals, two-terminal neuromorphic memristors, three-terminal neuromorphic transistors and artificial visual system are introduced from the aspects of the action mechanism and device structure. Finally, the development prospect of optoelectronic neuromorphic analog devices based on low-dimensional materials is prospected.
引用
收藏
页数:18
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