Device Image-IV Mapping using Variational Autoencoder for Inverse Design and Forward Prediction

被引:0
作者
Lu, Thomas [1 ]
Lu, Albert [1 ]
Wong, Hiu Yung [1 ]
机构
[1] San Jose State Univ, M PAC Lab, San Jose, CA 95192 USA
来源
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年
基金
美国国家科学基金会;
关键词
Compact Modeling; Inverse Design; Machine Learning; Manifold Learning; Technology Computer-Aided Design (TCAD); Variational Autoencoder;
D O I
10.23919/SISPAD57422.2023.10319583
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper demonstrates the learning of the underlying device physics by mapping device structure images to their corresponding Current-Voltage (IV) characteristics using a novel framework based on variational autoencoders (VAE). Since VAE is used, domain expertise is not required and the framework can be quickly deployed on any new device and measurement. This is expected to be useful in the compact modeling of novel devices when only device cross-sectional images and electrical characteristics are available (e.g. novel emerging memory). Technology Computer-Aided Design (TCAD) generated and hand-drawn Metal-OxideSemiconductor (MOS) device images and noisy drain-currentgate-voltage curves (IDVG) are used for the demonstration. The framework is formed by stacking two VAEs (one for image manifold learning and one for IDVG manifold learning) which communicate with each other through the latent variables. Five independent variables with different strengths are used. It is shown that it can perform inverse design (generate a design structure for a given IDVG) and forward prediction (predict IDVG for a given structure image, which can be used for compact modeling if the image is treated as device parameters) successfully. Since manifold learning is used, the machine is shown to be robust against noise in the inputs (i.e. using hand-drawn images and noisy IDVG curves) and not confused by weak and irrelevant independent variables.
引用
收藏
页码:161 / 164
页数:4
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