Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO3/SiC Substrates

被引：21
作者：
Zheng, Pengcheng [1 ,2 ]
Zhang, Shibin [3 ,4 ]
Wu, Jinbo [1 ,2 ]
Zhang, Liping [1 ,2 ]
Yao, Hulin [1 ,2 ]
Fang, Xiaoli [1 ,2 ]
Chen, Yang [1 ,2 ]
Huang, Kai [3 ,5 ]
Ou, Xin [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[4] XOI Technol Co Ltd, Shanghai 201899, Peoples R China
[5] Shanghai Novel Si Integrated Technol Co Ltd, Shanghai 201815, Peoples R China
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2024年 / 72卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Fifth-generation (5G) N79 band; filters; lithium niobate on silicon carbide (LiNbO3/SiC); longitudinal leaky surface acoustic wave (LL-SAW); resonators; spurious mode suppression; LITHIUM-NIOBATE; SILICON-CARBIDE; SAW RESONATORS; DELAY-LINES; CONSTANTS;
D O I：
10.1109/TMTT.2023.3305078
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
work demonstrates a group of longitudinal leaky surface acoustic wave (LL-SAW) resonators and fil-ters using thin-film X-cut lithium niobate on silicon carbide (LiNbO3/SiC). An improved design that exploits a nonstan-dard reflector (NSR) structure to suppress the lateral overtone spurious mode in the LL-SAW response is demonstrated. The fabricated resonators show scalable resonant frequencies from 3.75 to 4.95 GHz, admittance ratios (ARs) between 56.0 and 64.1 dB, and large k(t)(2) between 18.3% and 20%. The fabricated filter with a center frequency of 4.84 GHz shows a minimum insertion loss (IL) of 0.88 dB, an out-of-band rejection of 26 dB, and a 3-dB bandwidth (BW) of 457 MHz, partially covering the fifth-generation (5G) N79 band. The filter design tradeoff between SH mode suppression and BW is also demonstrated. The results herein show the great potential of LL-SAW technologies using LiNbO3/SiC substrate for commercial applications in 5G new radio (NR) and Wi-Fi 5/6 bands.
引用
收藏
页码：1480 / 1488
页数：9
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