Electrical Properties and Conduction Mechanism of Au/C20H12/n-Si Structure at High Temperatures Utilizing Impedance Measurements

The temperature-dependent changes in the capacitance-voltage (C-V) and conductivity-voltage (G/w-V) curves of the Au/C20H12/n-Si structure were investigated in the high-temperature range of 280-400 K. C and G values were strongly dependent on both temperature and bias voltage, especially in the depletion and accumulation regions in the experimental results. Basic electrical parameters including dopant donor atoms (N-D), depletion layer thickness (W-d), barrier height (CYRILLIC CAPITAL LETTER EFB), series resistance (R-s), and Fermi energy level (E-F) were calculated from the reverse bias (1/C-2-V) characteristic for each temperature. Among the parameters that have a significant effect on the performance of these devices, the voltage-dependent resistance profile (Ri) was obtained using the Nicollian-Brews technique, and the surface states (Nss) were obtained using the Hill-Coleman technique. While N-D increases with increasing temperature, R-s, N-ss, and CYRILLIC CAPITAL LETTER EFB decrease. The observed abnormal/anomalous peak in both the C-V and R-s-V plots and shifting of its positions and magnitude were attributed to a special distribution of N-ss in the semiconductor bandgap and their reordering/restriction under temperature and electric field effects. Both the C-V and G/w-V curves of the structure at room temperature were corrected considering the Rs effect to obtain the real C and G/w values.