Design and Synthesis of Fluorinated Quantum Dots for Efficient and Stable 0D/3D Perovskite Solar Cells

被引:16
作者
Zhao, Bo [1 ]
Guo, Junjun [1 ]
Zhao, Chenyu [1 ]
Zhang, Xuliang [1 ]
Huang, Hehe [1 ]
Tang, Zhijie [1 ]
Frolova, Lyubov A. [2 ]
Troshin, Pavel A. [2 ,5 ]
Ma, Wanli [1 ,3 ]
Yuan, Jianyu [1 ,4 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
[2] Russian Acad Sci FRC PCPMCRAS, Fed Res Ctr Problems Chem Phys & Med Chem, Chernogolovka 142432, Moscow Region, Russia
[3] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
[4] Soochow Univ, Jiangsu Key Lab Adv Negat Carbon Technol, Suzhou 215123, Jiangsu, Peoples R China
[5] Harbin Inst Technol, Zhengzhou Res Inst, 26 Longyuan East 7th, Zhengzhou 450000, Henan, Peoples R China
基金
中国国家自然科学基金;
关键词
fluorinated ligands; interfacial engineering; perovskite solar cells; quantum dots; stability; HALIDE PEROVSKITES; NANOCRYSTALS;
D O I
10.1002/adfm.202304161
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Dimensionality engineering involving the low-dimensional and 3D perovskites has been demonstrated as an efficient promising strategy to modulate interfacial energy loss as well as instability in perovskite solar cells (PSCs). Herein, the use of fluorinated Cesium Lead Iodide (CsPbI3) perovskite quantum dot (PQD) is first reported as interface modification layer for PSCs. The binding between the CsPbI3 PQD surface and native oleic acid (OLA)/oleylamine (OAm) ligands is governed by a dynamic adsorption-desorption equilibrium. Perfluorooctanoic acid (PFA) with stronger binding affinity and more hydrophobic nature is explored to partially replace OLA to prepare the fluorinated ligand capped CsPbI3 PQDs (F-CsPbI3). Through optimization of the addition of PFA during hot-injection synthesis, the in situ treated F-CsPbI3 PQDs display reduced surface defect states, higher photoluminescence quantum yields together with improved stability. Subsequently, both CsPbI3 and F-CsPbI3 PQDs are utilized as interface engineering layer in PSCs, delivering the best efficiency values of 21.99% and 23.42%, respectively, which is significantly enhanced compared to the control device (20.37%). More importantly, benefiting from its more hydrophobic properties, the F-CsPbI3 PQD treated device exhibits excellent ambient storage stability (25 degrees C, relative humidity: 35-45%), retaining over 80% of its initial efficiency after 1500 h aging.
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页数:9
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