Efficient Perovskite Solar Cells with Iodine-Doped Spiro-OMeTAD Hole Transport Layer via Fast Oxidation

被引:17
作者
Ma, Fei [1 ,2 ]
Zhao, Yang [1 ,2 ]
Qu, Zihan [1 ,2 ]
Yu, Shiqi [1 ,2 ]
Chu, Zema [1 ,2 ]
Xiong, Zhuang [1 ,2 ]
Zhou, Jingshu [2 ,3 ]
Wei, Zhongming [2 ,3 ]
Zhang, Xingwang [1 ,2 ]
You, Jingbi [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
doping; hole transport layers; perovskite solar cells; P-TYPE DOPANT; HIGHLY EFFICIENT; LITHIUM-SALTS; PERFORMANCE; STATE; INTERLAYERS; PYRIDINE;
D O I
10.1002/solr.202300042
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The state-of-the-art perovskite solar cells (PSCs) have reached a certified efficiency approaching 26% in decades. It is noteworthy that the record efficiencies are almost based on the regular structure PSCs using spiro-OMeTAD (Spiro) as the hole transport layer. However, the necessity of rather long (8-24 h) oxidation process of Spiro can probably cause potential instability and poor reproducibility of PSCs because of the hygroscopic additives in Spiro and humid-sensitive perovskite layer underneath. Herein, a fast oxidation method of Spiro by introducing the iodine molecule as oxidant dopant is demonstrated , which can enhance the conductivity and hole-extraction ability of the Spiro film in extremely short time, even without oxygen exposure. The I-2-doped Spiro-based devices reach optimal efficiencies of 25.44% and 24.27% under short oxidation (4 h) and oxygen-free environment, respectively. In addition, the I-2 helps Spiro keep a durable oxidized-state, making Spiro layer qualified conductivity for improved stability of PSCs. Consequently, the oxygen-free oxidized Spiro-based target champion device remains the 97.8% of initial steady output after storage of 30 days.
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页数:8
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