Effects of minimum uncut chip thickness on tungsten nano-cutting mechanism

被引:24
作者
Dong, Zhigang [1 ]
Wang, Hao [1 ]
Qi, Yongnian [1 ]
Guo, Xiaoguang [1 ]
Kang, Renke [1 ]
Bao, Yan [1 ]
机构
[1] Dalian Univ Technol, Key Lab Precis & Nontradit Machining Technol, Minist Educ, Dalian 116024, Peoples R China
基金
中国国家自然科学基金;
关键词
Nano -cutting mechanism; Molecular dynamics simulation; Single crystal tungsten; Chip forming; Minimum uncut chip thickness; Removal behavior; MOLECULAR-DYNAMICS; RAKE ANGLE; SILICON;
D O I
10.1016/j.ijmecsci.2022.107790
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Tungsten is considered as the preferred material for plasma-oriented materials in fusion reactors, and its ultra -precision machining is a concern at present. However, the critical cutting depth for chip generation is an important parameter affecting the surface formation and removal behavior of materials in ultra-precision machining. Herein, the simulation analysis of nano-cutting tungsten using molecular dynamics (MD) was per-formed, and a new method to determine the minimum uncut chip thickness hmin by identifying the atomic trajectory and calculating the relative coordinate value was proposed. Then, the effects rarely reported of the chip formation on the removal mechanism of tungsten were studied. The research showed that when the cutting depth h was 0.253 times of the cutting edge radius r, the critical cutting depth without chip was reached, namely hmin. The increasing cutting temperature and stress led to the decrease of machined surface quality and the increase of subsurface damage with the rising in h/r. Meanwhile, the dislocation slip dominated by the direction of 1/2 < 111 > was the main plastic deformation mechanism during cutting without chip, but the dislocation slip dominated by direction of < 100 > was main plastic deformation mechanism during processing with chip. The plastic deformation dominated by dislocation slip was also accompanied by the amorphization. The dislocation reaction from 1/2 < 111 > dislocation to < 100 > dislocation occurred under both energy and geometry conditions. Moreover, the dislocations had more energy to expand and evolve as a result of thermal-activated effect induced by elevated cutting force and temperature, which increased the dislocation density, depth of subsurface damage layer, and the stress variation degree of the machined area with the enhancement of hmin during cutting. This research provides a reference method for determining the minimum uncut chip thickness during material removal and is of significance for mastering the microscopic removal mechanism of tungsten.
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页数:12
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共 66 条
  • [1] Nanometric behaviour of monocrystalline silicon when single point diamond turned-a molecular dynamics and response surface methodology analysis
    Abdulkadir, Lukman N.
    Bello, Ademola A.
    Bawa, Mohammad A.
    Abioye, Adekunle M.
    [J]. ENGINEERING RESEARCH EXPRESS, 2020, 2 (03):
  • [2] Precision-improving manufacturing produces ordered ultra-fine grained surface layer of tungsten heavy alloy through ultrasonic elliptical vibration cutting
    Bai, Jinxuan
    Xu, Zhiwei
    Qian, Linmao
    [J]. MATERIALS & DESIGN, 2022, 220
  • [3] Experimental evaluation of the minimum uncut chip thickness (MUCT) in AISI H13 steel, using the end milling operation
    da Silva, Tatiany Mafra
    Diniz, Anselmo Eduardo
    Coelho, Reginaldo Teixeira
    [J]. INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2021, 113 (5-6) : 1431 - 1447
  • [4] Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon
    Dai, Houfu
    Li, Shaobo
    Chen, Genyu
    [J]. PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART J-JOURNAL OF ENGINEERING TRIBOLOGY, 2019, 233 (01) : 61 - 73
  • [5] The effect of tool geometry on subsurface damage and material removal in nanometric cutting single-crystal silicon by a molecular dynamics simulation
    Dai, Houfu
    Chen, Genyu
    Fang, Qihong
    Yin, Jiu
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (09):
  • [6] In-situ TEM observation and MD simulation of the reaction and transformation of &lt;100&gt; loops in tungsten during H 2+ & He+ dual-beam irradiation
    Ding, Yifan
    Guo, Long
    Li, Yipeng
    Liu, Xinyi
    Ran, Guang
    Wu, Lu
    Qiu, Xi
    Deng, Huiqiu
    Wu, Xiaoyong
    Li, Yuanming
    Huang, Xiuyin
    [J]. SCRIPTA MATERIALIA, 2021, 204
  • [7] Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide
    Erhart, P
    Albe, K
    [J]. PHYSICAL REVIEW B, 2005, 71 (03):
  • [8] Molecular dynamics study of the dewetting of copper on graphite and graphene: Implications for nanoscale self-assembly
    Fuentes-Cabrera, Miguel
    Rhodes, Bradley H.
    Fowlkes, Jason D.
    Lopez-Benzanilla, Alejandro
    Terrones, Humberto
    Simpson, Michael L.
    Rack, Philip D.
    [J]. PHYSICAL REVIEW E, 2011, 83 (04):
  • [9] Fundamentals of atomic and close-to-atomic scale manufacturing: a review
    Gao, Jian
    Luo, Xichun
    Fang, Fengzhou
    Sun, Jining
    [J]. INTERNATIONAL JOURNAL OF EXTREME MANUFACTURING, 2022, 4 (01)
  • [10] The effect of deposition velocity and cluster size on thin film growth by Cu cluster deposition
    Gong, Hengfeng
    Lu, Wei
    Wang, Lumin
    Li, Gongping
    Zhang, Shixun
    [J]. COMPUTATIONAL MATERIALS SCIENCE, 2012, 65 : 230 - 234