Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function

被引:2
作者
Gan, Xiaomin [1 ]
Dou, Wei [1 ]
Hou, Wei [1 ]
Yuan, Xing [1 ]
Lei, Liuhui [1 ]
Zhou, Yulan [1 ]
Yang, Jia [1 ]
Chen, Diandian [1 ]
Zhou, Weichang [1 ]
Tang, Dongsheng [1 ]
机构
[1] Hunan Normal Univ, Key Lab Low Dimens Quantum Struct & Quantum Contr, Synerget Innovat Ctr Quantum Effects & Applicat, Minist Educ, Changsha 410081, Peoples R China
基金
中国国家自然科学基金;
关键词
thin film transistors; low voltage; electric-double-layer; NOR logic operation; Zn-doped CuI; artificial synaptic; OXIDE; TEMPERATURE;
D O I
10.3390/nano13162345
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Low-voltage Zn-doped CuI thin film transistors (TFTs) gated by chitosan dielectric were fabricated at a low temperature. The Zn-doped CuI TFT exhibited a more superior on/off current ratio than CuI TFT due to the substitution or supplementation of copper vacancies by Zn ions. The Zn-doped CuI films were characterized by scanning electron microscope, X-ray diffraction, and X-ray photoelectron spectroscopy. The Zn-doped CuI TFTs exhibited an on/off current ratio of 1.58 x 10(4), a subthreshold swing of 70 mV/decade, and a field effect mobility of 0.40 cm(2)V(-1)s(-1), demonstrating good operational stability. Due to the electric-double-layer (EDL) effect and high specific capacitance (17.3 mu F/cm(2)) of chitosan gate dielectric, Zn-doped CuI TFT operates at a voltage below 2 V. The threshold voltage is 0.2 V. In particular, we have prepared Zn-doped CuI TFTs with two in-plane gates and NOR logic operation is implemented on such TFTs. In addition, using the ion relaxation effect and EDL effect of chitosan film, a simple pain neuron simulation is realized on such a p-type TFTs for the first time through the bottom gate to regulate the carrier transport of the channel. This p-type device has promising applications in low-cost electronic devices, complementary electronic circuit, and biosensors.
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页数:11
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