Incorporating Potassium Citrate to Improve the Performance of Tin-Lead Perovskite Solar Cells

被引:63
作者
Chen, Lei [1 ,2 ]
Li, Chongwen [1 ,2 ]
Xian, Yeming [1 ,2 ]
Fu, Sheng [1 ,2 ]
Abudulimu, Abasi [1 ,2 ]
Li, Deng-Bing [1 ,2 ]
Friedl, Jared D. [1 ,2 ]
Li, You [1 ,2 ]
Neupane, Sabin [1 ,2 ]
Tumusange, Marie Solange [1 ,2 ]
Sun, Nannan [1 ,2 ]
Wang, Xiaoming [1 ,2 ]
Ellingson, Randy J. [1 ,2 ]
Heben, Michael J. [1 ,2 ]
Podraza, Nikolas J. [1 ,2 ]
Song, Zhaoning [1 ,2 ]
Yan, Yanfa [1 ,2 ]
机构
[1] Univ Toledo, Dept Phys & Astron, 2801 W Bancroft St, Toledo, OH 43606 USA
[2] Univ Toledo, Wright Ctr Photovolta Innovat & Commercializat, 2801 W Bancroft St, Toledo, OH 43606 USA
关键词
all-perovskite tandem solar cells; buried interface; defect passivation; low-bandgap perovskites; HALIDE PEROVSKITES; EFFICIENCY; STABILITY;
D O I
10.1002/aenm.202301218
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Easy-to-form tin vacancies at the buried interface of tin-lead perovskites hinder the performance of low-bandgap perovskite solar cells (PSCs). Here, a synergistic strategy by incorporating potassium citrate (PC) into the poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole-transport layer to passivate the buried interface of Sn-Pb PSCs is reported. PC neutralizes the acidity of PEDOT:PSS and stabilizes the perovskite front surface, enhancing device stability. Citrate moieties coordinate with Sn2+ on the buried perovskite surface, preventing Sn2+ oxidation and suppressing defect formation. Additionally, potassium cations incorporate into Sn-Pb perovskites, enhancing crystallinity and passivating halide defects. The combined benefits enable efficient low-bandgap Sn-Pb PSCs with a power conversion efficiency of 22.7% and a high open-circuit voltage of 0.894 V. Using this method, 26.1% efficiency for all-perovskite tandem solar cells is demonstrated. These results emphasize the significance of buried interface passivation in developing efficient and stable Sn-Pb PSCs and all-perovskite tandem solar cells.
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页数:8
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