Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

被引：3

作者：

Soresi, Stefano ^{[1
]}

da Lisca, Mattia ^{[2
,3
,4
]}

Besancon, Claire ^{[1
]}

Vaissiere, Nicolas ^{[1
]}

Larrue, Alexandre ^{[1
]}

Calo, Cosimo ^{[1
]}

Alvarez, Jose ^{[2
,3
,4
]}

Longeaud, Christophe ^{[2
,3
,4
]}

Largeau, Ludovic ^{[5
]}

Garcia Linares, Pablo ^{[6
]}

Tournie, Eric ^{[7
]}

Kleider, Jean-Paul ^{[2
,3
,4
]}

Decobert, Jean ^{[1
]}

机构：

[1] III V Lab, 1 Ave Augustin Fresnel, F-97167 Palaiseau, France

[2] Univ Paris Saclay, Lab Genie Elect & Elect Paris, CNRS, Cent Supelec, F-91192 Gif Sur Yvette, France

[3] Ile France Photovolta Inst, IPVF, 30 Route Dept 128, F-91120 Palaiseau, France

[4] Sorbonne Univ, Lab Genie Elect & Elect Paris, CNRS, F-75252 Paris, France

[5] C2N CNRS Univ Paris Saclay, Route Nozay, F-91460 Marcoussis, France

[6] Univ Politecn Madrid, Inst Energia Solar, ETSI Telecomunicac, Av Complutense 30, Madrid 28040, Spain

[7] Univ Montpellier, CNRS, IES, F-34000 Montpellier, France

来源：

EPJ PHOTOVOLTAICS | 2023年 / 14卷

基金：

欧盟地平线“2020”;

关键词：

III-V; Si; NAsP commercial template; InP; InGaAs; MOVPE; EFFICIENCY; CONVERSION;

D O I：

10.1051/epjpv/2022027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The integration of III-V multi-junction solar cells on Si substrates is currently one of the most promising possibilities to combine high photovoltaic performance with a reduction of the manufacturing costs. In this work, we propose a prospective study for the realization of an InP/InGaAs tandem solar cell lattice-matched to InP on a commercially available Si template by direct MOVPE growth. The InP top cell and the InGaAs bottom cell were firstly separately grown and optimized using InP substrates, which exhibited conversion efficiencies of 13.5% and 11.4%, respectively. The two devices were then combined in a tandem device by introducing an intermediate InP/AlInAs lattice-matched tunnel junction, showing an efficiency of 18.4%. As an intermediate step towards the realization of the tandem device on Si, the InP and InGaAs single junction solar cells were grown on top of a commercial InP/GaP/Si template. This transitional stage enabled to isolate and evaluate the effects of the growth of III-V on Si on the photovoltaic performance through the comparison with the aforementioned devices on InP. Each cell was electrically characterized by external quantum efficiency and dark and illuminated current-voltage under solar simulator. The material quality was also analyzed by means of X-ray diffraction, Atomic-Force Microscopy, Transmission Electron and Scanning Electron Microscopy. The III-V on Si devices showed efficiencies of 3.6% and 2.0% for the InP and InGaAs solar cells, respectively.

引用

页数：11

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