Polarity-Mediated Antisolvent Control Enables Efficient Lanthanide-Based near-Infrared Perovskite LEDs

被引:15
作者
Pan, Jia-Lin [1 ]
Shen, Wan-Shan [1 ]
Li, Sheng-Nan [1 ]
Zhang, Zhong-Da [1 ]
Zhao, Feng [1 ]
Duan, Hong-Wei [1 ]
Wang, Ya-Kun [1 ]
Liao, Liang-Sheng [1 ,2 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China
[2] Macau Univ Sci & Technol, Macao Inst Mat Sci & Engn, Taipa 999078, Macau, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
quantum dots; perovskite; lanthanide ions; near-infrared; light-emitting diodes; LIGHT-EMITTING-DIODES;
D O I
10.1021/acs.nanolett.3c04586
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Alloying lanthanide ions (Yb3+) into perovskite quantum dots (Yb3+:CsPb(Cl1-xBrx)(3)) is an effective method to achieve efficient near-infrared (NIR) luminescence (>950 nm). Increasing the Yb3+ alloying ratio in the perovskite matrix enhances the luminescence intensity of Yb3+ emission at 990 nm. However, high Yb3+ alloying (>15%) results in vacancy-induced inferior material stability. In this work, we developed a polarity-mediated antisolvent manipulation strategy to resolve the incompatibility between a high Yb3+ alloying ratio and inferior stability of Yb3+:CsPb(Cl1-xBrx)(3). Precise control of solution polarity enables increased uniformity of the perovskite matrix with fewer trap densities. Employing this strategy, we obtain Yb3+:CsPb(Cl1-xBrx)(3) with the highest Yb3+ alloying ratio of 30.2% and a 2-fold higher electroluminescence intensity at 990 nm. We lever the engineered Yb3+:CsPb(Cl1-xBrx)(3) to fabricate NIR-LEDs, achieving a peak external quantum efficiency (EQE) of 8.5% at 990 nm: this represents the highest among perovskite NIR-LEDs with an emission wavelength above 950 nm.
引用
收藏
页码:2765 / 2772
页数:8
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