Molecular insights into vacancy defect formation in silicon anodes induced by femtosecond laser

被引:0
|
作者
Fan, Yexin [1 ]
Yang, Chengjuan [1 ]
Yang, Zhen [1 ]
Xu, Zongwei [2 ]
Li, Bingyu [1 ]
Zheng, Shuxian [1 ]
机构
[1] Tianjin Univ, Sch Mech Engn, Key Lab Mech & Theory Equipment Design, Minist Educ, Tianjin 300072, Peoples R China
[2] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrumen, Lab Micro Nano Mfg Technol, Tianjin 300072, Peoples R China
来源
MATERIALS TODAY COMMUNICATIONS | 2024年 / 38卷
关键词
Molecular dynamics; Silicon anode; Femtosecond laser; Point defect; Structural transformation; Atomic movement; DYNAMICS SIMULATION; PHASE-TRANSFORMATIONS; CRYSTALLINE SI; COLOR-CENTERS; HIGH-CAPACITY; DIAMOND; AMORPHIZATION; PERFORMANCE; TRANSITION; ELECTRODES;
D O I
10.1016/j.mtcomm.2024.108275
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon anodes in lithium-ion batteries have garnered attention due to their high capacity. However, the volume changes during charging and discharging lead to fracturing and reduced lifespan. To address this, femtosecond laser processing technology has been introduced to improve silicon anodes. This involves structural adjustments and the introduction of vacancy defects to enhance the diffusion rate of lithium ions and mitigate volume expansion. This study employs molecular dynamics simulation methods and, based on the Lambert-Beer law, constructs a complex three-dimensional model of a femtosecond laser-ablated silicon anode. The model enables atomic-level observation and tracking of the formation and evolution of vacancy defects in silicon anodes during the heating process induced by femtosecond laser pulses. The results reveal the dynamics of femtosecond laserinduced silicon vacancies, which can be divided into ballistic, combination, and stabilization phases. It was found that the concentration of vacancy defects significantly depends on the laser energy density and pulse width. Statistical analysis of the microstructural evolution of femtosecond laser-processed silicon anodes indicates that the locally induced high temperature and pressure by the femtosecond laser are the primary drivers of changes in vacancy defect concentration. Additionally, a quantitative analysis of laser-induced high-coordination structures was conducted, and an appropriate balance between vacancy concentration and high-coordination structures was established. The study shows that increasing the laser energy density or reducing the pulse width, while inducing more vacancy defects, also results in a higher number of high-coordination structures, which may affect the diffusivity of lithium ions. These findings not only provide in-depth molecular-level insights into the variations of femtosecond laser-induced vacancy defects but also offer significant theoretical support for the application of femtosecond laser-ablated silicon anodes.
引用
收藏
页数:17
相关论文
共 50 条
  • [1] Femtosecond laser writing of silicon vacancy color centers with specific defect orientations in silicon carbide
    Liu, Xiaoqing
    Liu, Yan
    Tian, Chengrui
    Zheng, Runsheng
    Li, Yan
    Wang, Junlei
    Li, Qingbo
    Zhao, Xian
    JOURNAL OF MATERIALS CHEMISTRY C, 2025,
  • [2] Femtosecond laser-induced formation of spikes on silicon
    T.-H. Her
    R.J. Finlay
    C. Wu
    E. Mazur
    Applied Physics A, 2000, 70 : 383 - 385
  • [3] Femtosecond laser-induced formation of spikes on silicon
    Her, TH
    Finlay, RJ
    Wu, C
    Mazur, E
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (04): : 383 - 385
  • [4] Formation of femtosecond laser induced surface structures on silicon: Insights from numerical modeling and single pulse experiments
    Derrien, T. J. -Y.
    Torres, R.
    Sarnet, T.
    Sentis, M.
    Itina, T. E.
    APPLIED SURFACE SCIENCE, 2012, 258 (23) : 9487 - 9490
  • [5] Femtosecond laser-induced shockwave formation on ablated silicon surface
    Panchatsharam, Senthilnathan
    Tan, Bo
    Venkatakrishnan, Krishnan
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)
  • [6] Femtosecond laser-induced shockwave formation on ablated silicon surface
    Panchatsharam, Senthilnathan
    Tan, Bo
    Venkatakrishnan, Krishnan
    Journal of Applied Physics, 2009, 105 (09):
  • [7] Femtosecond laser-induced formation of submicrometer spikes on silicon in water
    Shen, MY
    Crouch, CH
    Carey, JE
    Mazur, E
    APPLIED PHYSICS LETTERS, 2004, 85 (23) : 5694 - 5696
  • [8] Formation of Periodic Nanoripples on Silicon and Germanium Induced by Femtosecond Laser Pulses
    Le Harzic, R.
    Dorr, D.
    Sauer, D.
    Neumeier, M.
    Epple, M.
    Zimmermann, H.
    Stracke, F.
    LASERS IN MANUFACTURING 2011: PROCEEDINGS OF THE SIXTH INTERNATIONAL WLT CONFERENCE ON LASERS IN MANUFACTURING, VOL 12, PT B, 2011, 12 : 29 - 36
  • [9] A combined model for formation mechanism of ripples induced by femtosecond laser on silicon carbide
    Zhaoxuan Yan
    Qingyan lin
    Guoji Li
    Yong Zhang
    Wenjun Wang
    Xuesong Mei
    Applied Physics A, 2020, 126
  • [10] A combined model for formation mechanism of ripples induced by femtosecond laser on silicon carbide
    Yan, Zhaoxuan
    Lin, Qingyan
    Li, Guoji
    Zhang, Yong
    Wang, Wenjun
    Mei, Xuesong
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (11):