Fourier-IR Spectroscopy of Photoresist/Silicon Structures for Explosive Lithography

被引：1
作者：
Brinkevich, D. I. [1 ]
Grinyuk, E. V. [1 ,4 ]
Brinkevich, S. D. [1 ,5 ]
Prosolovich, V. S. [1 ]
Kolos, V. V. [2 ]
Zubova, O. A. [2 ]
Lastovskii, S. B. [3 ]
机构：
[1] Belarusian State Univ, Minsk, BELARUS
[2] JSC INTEGRAL Holding Management Co, Minsk, BELARUS
[3] Natl Acad Sci Belarus, SSPA Sci Pract Mat Res Ctr, Minsk, BELARUS
[4] Belarusian State Univ, Res Inst Phys Chem Problems, Minsk, BELARUS
[5] LLC My Med Ctr High Technol, Vsevolozhsk, Russia
来源：
JOURNAL OF APPLIED SPECTROSCOPY | 2024年 / 90卷 / 06期
关键词：
attenuated total internal reflection; negative photoresist; silicon; electron irradiation; IRRADIATION; FILMS;
D O I：
10.1007/s10812-024-01657-4
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Photoresist (PR) NFR 016D4 films deposited on the surface of silicon (Si) wafers by centrifugation were studied by attenuated total internal reflection Fourier-IR spectroscopy. Background absorption of the PR/Si structures was observed to increase at wave numbers <1600 cm(-1) because of the effect of electromagnetic radiation on the Si substrate and scattering/reflection at the PR/Si interface. Asymmetry in the force field of the aromatic ring in the NFR 016D4 film was detected. Spectral features of thick PR NFR 016D4 films were due to the presence of residual solvent. Formaldehyde formed by fragmentation of hydroxymethyl residues in the phenol-formaldehyde resin was detected in irradiated films. Radiation-induced processes in PR NFR 016D4 films at doses up to 2 center dot 10(15) cm(-2) involved mainly residual solvent molecules or by-products of PR film synthesis.
引用
收藏
页码：1223 / 1228
页数：6
相关论文
共 16 条
[1]   Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions [J].
Brinkevich D.I. ;
Kharchenko A.A. ;
Prosolovich V.S. ;
Odzhaev V.B. ;
Brinkevich S.D. ;
Yankovskii Y.N. .
Russian Microelectronics, 2019, 48 (03) :197-201
[2]   Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony Ions [J].
Brinkevich S.D. ;
Brinkevich D.I. ;
Prosolovich V.S. .
Russian Microelectronics, 2021, 50 (01) :33-38
[3]   Radiation-Induced Processes in Diazoquinone-Novolac Resist Films under Irradiation with 60Co γ-Rays [J].
Brinkevich, S. D. ;
Brinkevich, D. I. ;
Prosolovich, V. S. ;
Sverdlov, R. L. .
HIGH ENERGY CHEMISTRY, 2021, 55 (01) :65-74
[4]   Frustrated Total Internal Reflection Spectra of Diazoquinone-Novolac Photoresist Films [J].
Brinkevich, S. D. ;
Brinkevich, D. I. ;
Prosolovich, V. S. ;
Lastovskii, S. B. ;
Pyatlitski, A. N. .
JOURNAL OF APPLIED SPECTROSCOPY, 2021, 87 (06) :1072-1078
[5]   Modification of Diazoquinone-Novolac Photoresist Films beyond the Region of Implantation of B+Ions [J].
Brinkevich, S. D. ;
Grinyuk, E. V. ;
Brinkevich, D. I. ;
Prosolovich, V. S. .
HIGH ENERGY CHEMISTRY, 2020, 54 (05) :342-351
[6]   Mechanism of the Adhesive Interaction of Diazoquinone-Novolac Photoresist Films with Monocrystalline Silicon [J].
Brinkevich, S. D. ;
Grinyuk, E. V. ;
Brinkevich, D. I. ;
Sverdlov, R. L. ;
Prosolovich, V. S. ;
Pyatlitski, A. N. .
JOURNAL OF APPLIED SPECTROSCOPY, 2020, 87 (04) :647-651
[7]   Chemical Lift-Off Lithography of Metal and Semiconductor Surfaces [J].
Cheung, Kevin M. ;
Stemer, Dominik M. ;
Zhao, Chuanzhen ;
Young, Thomas D. ;
Belling, Jason N. ;
Andrews, Anne M. ;
Weiss, Paul S. .
ACS MATERIALS LETTERS, 2020, 2 (01) :76-83
[8]   Processes Induced in DLC/Polyimide Structures by Irradiation with 60Co γ-Rays [J].
Kharchenko, A. A. ;
Fedotova, Yu A. ;
Zur, I. A. ;
Brinkevich, D., I ;
Brinkevich, S. D. ;
Grinyuk, E., V ;
Prosolovich, V. S. ;
Movchan, S. A. ;
Remnev, G. E. ;
Linnik, S. A. ;
Lastovskii, S. B. .
HIGH ENERGY CHEMISTRY, 2022, 56 (05) :354-362
[9]  
Moreau W.M., 1988, SEMICONDUCTOR LITHOG
[10]   ATTENUATED TOTAL REFLECTION SPECTRA OF NITRIDED SiO2/Si STRUCTURES [J].
Odzhaev, V. B. ;
Pyatlitski, A. N. ;
Prosolovich, V. S. ;
Kovalchuk, N. S. ;
Soloviev, Ya A. ;
Zhygulin, D., V ;
Shestovsky, D., V ;
Yankovski, Yu N. ;
Brinkevich, D., I .
JOURNAL OF APPLIED SPECTROSCOPY, 2022, 89 (04) :665-670
12