Improved interface microstructure between crystalline silicon and nanocrystalline silicon oxide window layer of silicon heterojunction solar cells

被引：7

作者：

Zhou, Yinuo ^{[1
,2
]}

Zhang, Liping ^{[1
,2
]}

Liu, Wenzhu ^{[1
,2
]}

Zhang, Honghua ^{[1
,2
]}

Huang, Shenglei ^{[1
,2
,3
]}

Lan, Shihu ^{[4
]}

Zhao, Hui ^{[4
]}

Fu, Haoxin ^{[4
]}

Han, Anjun ^{[1
]}

Li, Zhenfei ^{[1
,2
]}

Jiang, Kai ^{[1
,2
]}

Yu, Xiangrui ^{[5
]}

Zhao, Dongming ^{[5
]}

Li, Rui ^{[6
]}

Meng, Fanying ^{[1
,2
]}

Liu, Zhengxin ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Res Ctr New Energy Technol RCNET, Natl Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci UCAS, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[4] Tongwei Solar Chengdu Co Ltd, Chengdu 610200, Peoples R China

[5] Huaneng Clean Energy Res Inst, Beijing 102209, Peoples R China

[6] Huaneng Gansu Energy Dev Co Ltd, Lanzhou 730070, Gansu, Peoples R China

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2024年 / 265卷

关键词：

Microstructure of silicon films; Silicon heterojunction solar cells; Intrinsic hydrogenated amorphous silicon; Nanocrystalline silicon oxide; Ions bombardment; Surface passivation; CHEMICAL-VAPOR-DEPOSITION; H THIN-FILMS; MICROCRYSTALLINE SILICON; STRUCTURAL-CHANGES; HIGH-EFFICIENCY; HYDROGEN; PASSIVATION; MECHANISM; STRESS; GROWTH;

D O I：

10.1016/j.solmat.2023.112652

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

N-type hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) is potential to enhance the performance of silicon heterojunction solar cells, but the raised plasma damage on underlying layer during the nc-SiOx:H deposition with a high-volume fraction of hydrogen is a burning issue. The underlying intrinsic hydrogenated amorphous silicon (i-a-Si:H) bilayer between n-type crystalline silicon (c-Si) and n-type nc-SiOx:H has been investigated by modulating silane (SiH4) gas flow rate (GFR) of interface porous layer. It has been found that the initial H-rich ia-Si:H bilayer deposited by interfacial 1600 sccm GFR with relatively stable larger voids diameter and less voids number density can not only withstand hydrogen ions bombardment but also passivate c-Si surface well. Meanwhile, it also has been verified that the optimal n-seed deposition can further enhance both total hydrogen content and hydrogen content in compact structure to promote c-Si surface passivation and carrier transportation. The optimized SiH4 GFR for the interfacial i-a-Si:H growth and the appropriate deposition time of nseed layer have been applied into the front passivation layer of silicon heterojunction solar cells, thus a high efficiency of approximate 25 % with high VOC and FF has been achieved.

引用

页数：8

共 49 条

[1] Integration of thin n-type nc-Si:H layers in the window-multilayer stack of heterojunction solar cells [J].