ELECTRON EMISSION CHARACTERISTICS OF FIELD EMITTER ARRAYS COATED WITH OVER-STOICHIOMETRIC HAFNIUM NITRIDE

被引：0
|
作者：
Osumi, Tomoaki [1 ,2 ]
Hori, Ryosuke [1 ]
Nagao, Masayoshi [2 ]
Murata, Hiromasa [2 ]
Gotoh, Yasuhito [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto, Japan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan
来源：
2023 IEEE 36TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, IVNC | 2023年
关键词：
field emitter array; hafnium nitride; nitrogen composition;
D O I：
10.1109/IVNC57695.2023.10189004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Field emitter arrays (FEAs) were fabricated with over-stoichiometric hafnium nitride (HfN1+x) thin films. Nitrogen compositions and oxygen impurities of the thin films were evaluated by backscattering spectrometry, and crystal structures by X-ray diffraction. Electron emission characteristics of the FEAs with HfN1+x were compared with those of FEAs with stoichiometric HfN. The emission currents of the FEAs with HfN1+x were lower than those of the FEAs with HfN at the same voltage. Emission currents of both FEAs showed gradual decrease in continuous emission test after 15 hours
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页码：172 / 173
页数：2
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