Common salts directed the growth of metal-free horizontal SWNT arrays

被引:2
作者
Yu, Yi [1 ]
Sun, Xiaoyue [2 ]
Du, Ran [2 ]
Zhang, Hongjie [1 ]
Liu, Dayan [1 ]
Wang, Ying [1 ]
Zhang, Xinyu [1 ]
Zhang, Wenyu [3 ]
Zhang, Shuchen [4 ]
Qian, Jinjie [1 ]
Hu, Yue [1 ]
Huang, Shaoming [1 ,5 ]
机构
[1] Wenzhou Univ, Coll Chem & Mat Engn, Key Lab Carbon Mat Zhejiang Prov, Wenzhou 325000, Peoples R China
[2] Beijing Inst Technol, Ctr Intelligent Hlth Mat & Devices, Sch Mat Sci & Engn, Key Lab High Energy Dens Mat,Minist Educ, Beijing 100081, Peoples R China
[3] Standardizat Res Inst China North Ind Grp Corp Ltd, Beijing 100871, Peoples R China
[4] Peking Univ, Coll Chem & Mol Engn, Beijing Sci & Engn Ctr Nanocarbons, Sch Mat Sci & Engn, Beijing 100871, Peoples R China
[5] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou Key Lab Low Dimens Mat & Energy Storage, Guangzhou 510006, Peoples R China
基金
中国国家自然科学基金;
关键词
WALLED CARBON NANOTUBES; CHEMICAL-VAPOR-DEPOSITION; CATALYST-FREE GROWTH; HIGH-DENSITY; DIAMETER; QUARTZ; COPPER;
D O I
10.1039/d2nr05361f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Acquiring metal-free horizontal single-walled carbon nanotube (SWNT) arrays is of paramount importance for the development of stable nanodevices. However, the majority of SWNTs are prepared with transition metal-based catalysts, which will inevitably leave metallic residuals and deteriorate the device performance. Here, green and low-cost NaCl is developed as a metal-free catalyst. By employing a strategy of rapid nucleation at a higher temperature followed by steady growth at a lower temperature, the production of a well-defined NaCl catalyst capable of growing metal-free horizontal SWNT arrays with an average density of similar to 100 tubes per 100 mu m is realized. Besides, we prove that the as-grown metal-free SWNT arrays have a unique advantage in preparing stable devices for eliminating the potential risk of local mass catalyst residuals. Hence, the current study can offer a feasible solution to promote practical applications of SWNT-based next-generation nanodevices.
引用
收藏
页码:802 / 808
页数:7
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