Comprehensive measurement of the near-infrared refractive index of GaAs at cryogenic temperatures

被引:4
|
作者
Jiang, Guo-Qiu [1 ,2 ,3 ,4 ]
Zhang, Qi-Hang [1 ,2 ,3 ,4 ]
Zhao, Jun-Yi [1 ,2 ,3 ,4 ]
Qiao, Yu-Kun [1 ,2 ,3 ,4 ]
Ge, Zhen-Xuan [1 ,2 ,3 ,4 ]
Liu, Run-Ze [1 ,2 ,3 ,4 ]
Chung, Tung-Hsun [3 ,5 ]
Lu, Chao-Yang [1 ,2 ,3 ,4 ,5 ]
Huo, Yong-Heng [1 ,2 ,3 ,4 ,5 ]
机构
[1] Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Sch Phys Sci, Hefei 230026, Peoples R China
[3] Univ Sci & Technol China, Shanghai Res Ctr Quantum Sci, Shanghai 201315, Peoples R China
[4] Univ Sci & Technol China, CAS Ctr Excellence Quantum Informat & Quantum Phys, Shanghai 201315, Peoples R China
[5] Univ Sci & Technol China, Hefei Natl Lab, Hefei 230088, Peoples R China
基金
中国国家自然科学基金;
关键词
MICROCAVITY;
D O I
10.1364/OL.491357
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The refractive index is a critical parameter in optical and photonic device design. However, due to the lack of available data, precise designs of devices working in low temperatures are still frequently limited. In this work, we have built a homemade spectroscopic ellipsometer (SE) and measured the refractive index of GaAs at a matrix of temperatures (4 K < T < 295 K) and photon wavelengths (700 nm < & lambda; < 1000 nm) with a system error of & SIM;0.04. We verified the credibility of the SE results by comparing them with afore-reported data at room temperature and with higher precision values measured by vertical GaAs cavity at cryogenic temperatures. This work makes up for the lack of the near-infrared refractive index of GaAs at cryo-genic temperatures and provides accurate reference data for semiconductor device design and fabrication. & COPY; 2023 Optica Publishing Group
引用
收藏
页码:3507 / 3510
页数:4
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