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Atomic-scale tailoring of chemisorbed atomic oxygen on epitaxial graphene for graphene-based electronic devices
被引:1
作者:
Kim, Tae Soo
[1
,2
]
Ahn, Taemin
[3
]
Kim, Tae-Hwan
[3
]
Choi, Hee Cheul
[1
,2
]
Yeom, Han Woong
[2
,3
]
机构:
[1] Pohang Univ Sci & Technol POSTECH, Dept Chem, Pohang 37673, South Korea
[2] Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea
[3] POSTECH, Dept Phys, Pohang 37673, South Korea
基金:
新加坡国家研究基金会;
关键词:
SCANNING-TUNNELING-MICROSCOPY;
SPECTROSCOPY;
DESORPTION;
REDUCTION;
DIFFUSION;
D O I:
10.1063/5.0158595
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Graphene, with its unique band structure, mechanical stability, and high charge mobility, holds great promise for next-generation electronics. Nevertheless, its zero bandgap challenges the control of current flow through electrical gating, consequently limiting its practical applications. Recent research indicates that atomic oxygen can oxidize epitaxial graphene in a vacuum without causing unwanted damage. In this study, we have investigated the effects of chemisorbed atomic oxygen on the electronic properties of epitaxial graphene using scanning tunneling microscopy (STM). Our findings reveal that oxygen atoms effectively modify the electronic states of graphene, resulting in a bandgap at its Dirac point. Furthermore, we demonstrate that it is possible to selectively induce desorption or hopping of oxygen atoms with atomic precision by applying appropriate bias sweeps with an STM tip. These results suggest the potential for atomic-scale tailoring of graphene oxide, enabling the development of graphene-based atomic-scale electronic devices.
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