Design of a Compact Spin-Orbit-Torque-Based Ternary Content Addressable Memory

被引：9

作者：

Narla, Siri ^{[1
]}

Kumar, Piyush ^{[1
]}

Laguna, Ann Franchesca ^{[2
]}

Reis, Dayane ^{[2
]}

Hu, X. Sharon ^{[2
]}

Niemier, Michael ^{[2
]}

Naeemi, Azad ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46556 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 02期

关键词：

Macrospin; magnetic tunnel junction (MTJ); micromagnetic; spin-orbit torque (SOT); ternary content addressable memory (TCAM); voltage-controlled magnetic anisotropy (VCMA); LOW-POWER; HIGH-SPEED; SOT-MRAM; ENHANCEMENT; SRAM; CELL;

D O I：

10.1109/TED.2022.3231569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

article presents the design of a novel and compact spin-orbit torque (SOT)-based ternary content addressable memory (TCAM). Experimentally validated/calibrated micromagnetic and macrospin simulations have been used to quantify various tradeoffs regarding the write operation, such as write energy, error rate, and retention time. SPICE simulations incorporating various sources of variability are used to evaluate search operations, optimize the proposed novel TCAM cell based on SOT magnetic random access memory (SOT-MRAM), and benchmark it against static random access memory (SRAM)-and FeFET-based TCAMs. We show low search error rates (SERs) (< 10(-4)) while considering various sources of variability for four transistors-and two magnetic tunnel junctions (MTJs)-based TCAM array.

引用

页码：506 / 513

页数：8

共 46 条

[21] Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM) [J].

Narla, Siri ;

Kumar, Piyush ;

Laguna, Ann Franchesca ;

Reis, Dayane ;

Sharon, X. Sharon ;

Niemier, Michael ;

Naeemi, Azad .

IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2022, 8 (01) :44-52

[22] Ferroelectric ternary content-addressable memory for one-shot learning [J].

Ni, Kai ;

Yin, Xunzhao ;

Laguna, Ann Franchesca ;

Joshi, Siddharth ;

Duenkel, Stefan ;

Trentzsch, Martin ;

Mueeller, Johannes ;

Beyer, Sven ;

Niemier, Michael ;

Hu, Xiaobo Sharon ;

Datta, Suman .

NATURE ELECTRONICS, 2019, 2 (11) :521-529

[23]

Onizawa N, 2014, IEEE INT NEW CIRC, P193, DOI 10.1109/NEWCAS.2014.6934016

[24] A Nonvolatile Fast-Read Two-Transistor SRAM Based on Spintronic Devices [J].

Pan C. ;

Naeemi A. .

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017, 3 :93-99

[25] Ultralow Voltage Manipulation of Ferromagnetism [J].

Prasad, Bhagwati ;

Huang, Yen-Lin ;

Chopdekar, Rajesh, V ;

Chen, Zuhuang ;

Steffes, James ;

Das, Sujit ;

Li, Qian ;

Yang, Mengmeng ;

Lin, Chia-Ching ;

Gosavi, Tanay ;

Nikonov, Dmitri E. ;

Qiu, Zi Qiang ;

Martin, Lane W. ;

Huey, Bryan D. ;

Young, Ian ;

Iniguez, Jorge ;

Manipatruni, Sasikanth ;

Ramesh, Ramamoorthy .

ADVANCED MATERIALS, 2020, 32 (28)

[26]

Predictive Technology Model (PTM), About us

[27] Ultra-Fast and High-Reliability SOT-MRAM: From Cache Replacement to Normally-Off Computing [J].

Prenat, Guillaume ;

Jabeur, Kotb ;

Vanhauwaert, Pierre ;

Di Pendina, Gregory ;

Oboril, Fabian ;

Bishnoi, Rajendra ;

Ebrahimi, Mojtaba ;

Lamard, Nathalie ;

Boulle, Olivier ;

Garello, Kevin ;

Langer, Juergen ;

Ocker, Berthold ;

Cyrille, Marie-Claire ;

Gambardella, Pietro ;

Tahoori, Mehdi ;

Gaudin, Gilles .

IEEE TRANSACTIONS ON MULTI-SCALE COMPUTING SYSTEMS, 2016, 2 (01) :49-60

[28] High-Density SOT-MRAM Based on Shared Bitline Structure [J].

Seo, Yeongkyo ;

Roy, Kaushik .

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2018, 26 (08) :1600-1603

[29] High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM [J].

Seo, Yeongkyo ;

Kwon, Kon-Woo ;

Fong, Xuanyao ;

Roy, Kaushik .

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2016, 6 (03) :293-304

[30] Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces [J].

Shi, Shengjie ;

Ou, Yongxi ;

Aradhya, S. V. ;

Ralph, D. C. ;

Buhrman, R. A. .

PHYSICAL REVIEW APPLIED, 2018, 9 (01)

← 1 2 3 4 5 →