Design of a Compact Spin-Orbit-Torque-Based Ternary Content Addressable Memory

被引：9

作者：

Narla, Siri ^{[1
]}

Kumar, Piyush ^{[1
]}

Laguna, Ann Franchesca ^{[2
]}

Reis, Dayane ^{[2
]}

Hu, X. Sharon ^{[2
]}

Niemier, Michael ^{[2
]}

Naeemi, Azad ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46556 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 02期

关键词：

Macrospin; magnetic tunnel junction (MTJ); micromagnetic; spin-orbit torque (SOT); ternary content addressable memory (TCAM); voltage-controlled magnetic anisotropy (VCMA); LOW-POWER; HIGH-SPEED; SOT-MRAM; ENHANCEMENT; SRAM; CELL;

D O I：

10.1109/TED.2022.3231569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

article presents the design of a novel and compact spin-orbit torque (SOT)-based ternary content addressable memory (TCAM). Experimentally validated/calibrated micromagnetic and macrospin simulations have been used to quantify various tradeoffs regarding the write operation, such as write energy, error rate, and retention time. SPICE simulations incorporating various sources of variability are used to evaluate search operations, optimize the proposed novel TCAM cell based on SOT magnetic random access memory (SOT-MRAM), and benchmark it against static random access memory (SRAM)-and FeFET-based TCAMs. We show low search error rates (SERs) (< 10(-4)) while considering various sources of variability for four transistors-and two magnetic tunnel junctions (MTJs)-based TCAM array.

引用

页码：506 / 513

页数：8

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