Enhancing thermoelectric properties of CuNiO thin films through post-annealing: Effect on Seebeck coefficient and power generation

被引:1
|
作者
Ali, M. Yasir [1 ]
Almufarij, Rasmiah S. [2 ]
Ashfaq, Arslan [1 ]
Shokralla, Elsammani Ali [3 ]
Alsalmah, Hessa A. [4 ]
Capangpangan, Rey Y. [5 ]
Alguno, Arnold C. [6 ,7 ]
Macadangdang Jr, Romulo R. [8 ]
Khan, Zahra Essa [9 ]
Hu, Xun [9 ]
Ali, Adnan [1 ]
机构
[1] Univ Faisalabad, Dept Phys, Govt Coll, Faisalabad 38000, Pakistan
[2] Princess Nourah Bint Abdulrahman Univ, Coll Sci, Dept Biol, POB 84428, Riyadh 11671, Saudi Arabia
[3] Al Baha Univ, Fac Sci, Dept Phys, Alaqiq 657797738, Saudi Arabia
[4] Imam Mohammad Ibn Saud Islamic Univ IMSIU, Coll Sci, Dept Phys, Riyadh 11623, Saudi Arabia
[5] Mindanao State Univ Naawan, Coll Marine & Allied Sci, Dept Phys Sci & Math, Misamis Oriental 9023, Philippines
[6] Mindanao State Univ, Iligan Inst Technol, Dept Phys, Iligan 9200, Philippines
[7] Mindanao State Univ, Premier Res Inst Sci & Math PRISM, Iligan Inst Technol, Iligan 9200, Philippines
[8] Natl Univ, Coll Allied Hlth, Manila 1008, Philippines
[9] Univeristy Jinan, Dept Mat Sci & Engn, Jinan, Peoples R China
关键词
CuNiO; Thermoelectric; Thin film; Defect; Post-annealing;
D O I
10.1016/j.matlet.2023.135155
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The need for the best thermoelectric power generation to extract low-grade heat energy from the human body has generated considerable interest. However, developing oxide-based thermoelectric materials with both high stability and Seebeck coefficient remains challenging. In this work, we have prepared CuNiO thin film with an economical and simple thermal evaporation method and post-annealed at different temperatures from 400 to 550 degrees C. XRD and SEM have determined the crystal structure and surface morphology of the CuNiO thin film. The electrical conductivity and charge carrier concentration increase with post-annealing temperature due to the formation of the secondary phases. The Seebeck coefficient has decreased from 65.1 to 37.9 mu V/K with post-annealing temperature due to improved charge carrier density, the electronic band structure of the material and secondary phases. The maximum power factor has been achieved in the unannealed sample.
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页数:4
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