Wafer Level Integration of Sub-THz and THz Systems

被引：2
|
作者：
Ermolov, Vladimir [1 ]
Lamminen, Antti [1 ]
Saarilahti, Jaakko [1 ]
Varonen, Mikko [1 ]
Kantanen, Mikko [1 ]
Lahti, Markku [1 ]
Pursula, Pekka [1 ]
机构：
[1] VTT Tech Res Ctr Finland, Espoo 02150, Finland
来源：
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2024年 / 34卷 / 02期
基金：
芬兰科学院;
关键词：
Silicon; Coplanar waveguides; Flip-chip devices; Electromagnetic waveguides; Probes; Fabrication; Semiconductor device measurement; Integration; micromachining; terahertz (THz); TERAHERTZ;
D O I：
10.1109/LMWT.2023.3341169
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The letter presents a wafer level integration technology for sub-THz and THz systems. The developed integration process relies on deep reactive ion etching (DRIE) micromachining and Au-Au wafer bonding technology of silicon wafer substrates. The method allows integration of individual standard monolithic microwave integrated circuits (MMICs) of different technologies into the same Si package. The process includes only standard fabrication steps than can be automated. The integration process is scalable and cost efficient for future sub-THz and THz communication and sensing applications.
引用
收藏
页码：187 / 190
页数：4
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