Fine-grained NaNbO3-based relaxor antiferroelectric ceramics with high energy-storage performance

被引：1
作者：
Chen, Xiaoming [1 ]
Cheng, Xuxin [1 ]
Fan, Pengyuan [2 ,3 ]
机构：
[1] Zhaoqing Univ, Sch Elect & Elect Engn, Zhaoqing Rd, Zhaoqing 526061, Guangdong, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
[3] Guangdong HUST Ind Technol Res Inst, Dongguan 523808, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2023年 / 34卷 / 35期
关键词：
LEAD-FREE CERAMICS; DIELECTRIC MATERIALS; HIGH-TEMPERATURE; DENSITY; TRANSITION; CAPACITORS; STABILITY; PROPERTY; BEHAVIOR; AGNBO3;
D O I：
10.1007/s10854-023-11605-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The breakdown electric field of NaNbO3-based antiferroelectric (AFE) ceramics is low, which makes it difficult to improve its energy-storage density. In this study, by adding nano-SiO2, sintering temperature of 0.88Na(0.94)Sm(0.02)NbO(3)-0.12Sr(0.7)Bi(0.2)TiO(3 (NN-SBT-2Sm)) relaxor AFE ceramics was reduced from 1150 to 980 degrees C. Mean grain size of (NN-SBT-2Sm) ceramics also decreased from 3.3 to 0.35 mu m. Consequently, large recoverable energy-storage density of 5.89 J/cm(3) was achieved at high breakdown electric field of 42 kV/mm, accompanied by good frequency stability (10-100 Hz) and temperature stability (25-125 degrees C). This performance demonstrates that the nano-SiO2-doped NN-SBT-2Sm relaxor AFE ceramics is a promising class of lead-free dielectric material for dielectric capacitors with high energy-storage density.
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页数：10
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