Control of the resistive switching voltage and reduction of the high-resistive-state current of zinc oxide by self-assembled monolayers

被引：4
|
作者：
Nakano, Masahiro [1 ]
Matsui, Hiroki [1 ]
Nakagawa, Sae [1 ]
You, Jiaxun [2 ]
Shahiduzzaman, Md. [1 ,3 ]
Karakawa, Makoto [1 ,2 ,3 ,4 ]
Taima, Tetsuya [1 ,2 ,3 ,4 ]
机构：
[1] Kanazawa Univ, Dept Grad Sch Nat Sci & Technol, Kakuma Machi, Kanazawa 9201192, Japan
[2] Kanazawa Univ, Grad Sch Frontier Sci Initiat InFiniti, Kakuma Machi, Kanazawa 9201192, Japan
[3] Kanazawa Univ, Nanomat Res Inst NanoMaRI, Kanazawa 9201192, Japan
[4] Kanazawa Univ, Inst Frontier Sci Initiat InFiniti, Kakuma Machi, Kanazawa, Ishikawa 9201192, Japan
来源：
CHEMICAL COMMUNICATIONS | 2023年 / 59卷 / 38期
关键词：
ENERGY; PERFORMANCE; DEVICES; FILMS;
D O I：
10.1039/d2cc06919a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We investigated the effect of self-assembled monolayer (SAM) modification of ZnO on the resistive switching behaviour by fabricating electrode-sandwiched devices (ITO/ZnO-SAM/Al). The resistive switching voltages of SAM-modified ZnO films were shifted from that of bare ZnO depending on the surface dipole induced by the SAMs. In particular, methylaminopropyl-substituted SAM-modified ZnO showed lower switching voltage (1.6 V) than bare ZnO (2.9 V). Moreover, the on/off ratio was also improved by SAM modification (from 10(2) to 10(4)).
引用
收藏
页码：5761 / 5764
页数：4
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