Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells

被引：5

作者：

Tomm, Jens W. ^{[1
]}

Bercha, Artem ^{[2
]}

Muziol, Grzegorz ^{[2
]}

Piprek, Joachim ^{[3
]}

Trzeciakowski, Witold ^{[2
]}

机构：

[1] Max Born Inst, Max Born Str 2A, D-12489 Berlin, Germany

[2] Inst Wysokich Cisnien PAN, Sokolowska 29-37, PL-01142 Warsaw, Poland

[3] NUSOD Inst, Newark, DE 19714 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2023年 / 17卷 / 07期

关键词：

InGaN; GaN; light emitting diode (LED); recombinations; transient photoluminescence; wide quantum wells; LUMINESCENCE;

D O I：

10.1002/pssr.202300027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The analysis of the photoluminescence of polar light emitting diode (LED) structures with a 25 nm In0.17Ga0.83N quantum well is reported. The observed emission most likely originates from a set of energetically close excited states (ES), while the ground state decays only extremely slowly on a mu s-to-ms timescale, that is, long-living charge accumulates there. However, this population can also be quantified spectroscopically by applying short reverse voltage pulses. The emission from ES is effective and nearly exponential with decay time constants of 1.5 and 8 ns at 6 and 300 K, respectively, and is likely dominated by radiative processes. These findings point to a possible route to improved polar device architectures.

引用

页数：6

共 50 条

[31] Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells [J].

Mu, Qi ;

Xu, Mingsheng ;

Wang, Xuesong ;

Wang, Qiang ;

Lv, Yuanjie ;

Feng, Zhihong ;

Xu, Xiangang ;

Ji, Ziwu .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 76 :1-5

[32] InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties [J].

Hospodkova, Alice ;

Hubacek, Tomas ;

Oswald, Jiri ;

Pangrac, Jiri ;

Kuldova, Karla ;

Hyvl, Matej ;

Dominec, Filip ;

Ledoux, Gilles ;

Dujardin, Christophe .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (05)

[33] Nonradiative recombination dynamics in InGaN/GaN LED defect system [J].

Chernyakov, A. E. ;

Sobolev, M. M. ;

Ratnikov, V. V. ;

Shmidt, N. M. ;

Yakimov, E. B. .

SUPERLATTICES AND MICROSTRUCTURES, 2009, 45 (4-5) :301-307

[34] Efficiency droop in zincblende InGaN/GaN quantum wells [J].

Dyer, D. ;

Church, S. A. ;

Ahumada-Lazo, R. ;

Kappers, M. J. ;

Halsall, M. P. ;

Parkinson, P. ;

Wallis, D. J. ;

Oliver, R. A. ;

Binks, D. J. .

NANOSCALE, 2024, 16 (29) :13953-13961

[35] Characteristics of nanoporous InGaN/GaN multiple quantum wells [J].

Wang, W. J. ;

Yang, G. F. ;

Chen, P. ;

Yu, Z. G. ;

Liu, B. ;

Xie, Z. L. ;

Xiu, X. Q. ;

Wu, Z. L. ;

Xu, F. ;

Xu, Z. ;

Hua, X. M. ;

Zhao, H. ;

Han, P. ;

Shi, Y. ;

Zhang, R. ;

Zheng, Y. D. .

SUPERLATTICES AND MICROSTRUCTURES, 2014, 71 :38-45

[36] MOCVD growth and properties of InGaN/GaN multi-quantum wells [J].

Keller, S ;

Abare, AC ;

Minsky, MS ;

Wu, XH ;

Mack, MP ;

Speck, JS ;

Hu, E ;

Coldren, LA ;

Mishra, UK ;

DenBaars, SP .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :1157-1160

[37] Effect of annealing on InGaN/GaN multiple quantum wells [J].

Kim, TS ;

Park, JY ;

Cuong, TV ;

Kim, HG ;

Lee, HJ ;

Suh, EK ;

Hong, CH .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (05) :871-875

[38] Gain characteristics of InGaN-GaN quantum wells [J].

Jiang, HT ;

Singh, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (09) :1058-1064

[39] Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells [J].

Chang, Cheng-Yu ;

Wu, Yuh-Renn .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (06) :884-889

[40] Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells [J].

Takamiya, Kengo ;

Yagi, Shuhei ;

Yaguchi, Hiroyuki ;

Akiyama, Hidefumi ;

Shojiki, Kanako ;

Tanikawa, Tomoyuki ;

Katayama, Ryuji .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (05)

← 1 2 3 4 5 →