Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells

被引：4

作者：

Tomm, Jens W. ^{[1
]}

Bercha, Artem ^{[2
]}

Muziol, Grzegorz ^{[2
]}

Piprek, Joachim ^{[3
]}

Trzeciakowski, Witold ^{[2
]}

机构：

[1] Max Born Inst, Max Born Str 2A, D-12489 Berlin, Germany

[2] Inst Wysokich Cisnien PAN, Sokolowska 29-37, PL-01142 Warsaw, Poland

[3] NUSOD Inst, Newark, DE 19714 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2023年 / 17卷 / 07期

关键词：

InGaN; GaN; light emitting diode (LED); recombinations; transient photoluminescence; wide quantum wells; LUMINESCENCE;

D O I：

10.1002/pssr.202300027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The analysis of the photoluminescence of polar light emitting diode (LED) structures with a 25 nm In0.17Ga0.83N quantum well is reported. The observed emission most likely originates from a set of energetically close excited states (ES), while the ground state decays only extremely slowly on a mu s-to-ms timescale, that is, long-living charge accumulates there. However, this population can also be quantified spectroscopically by applying short reverse voltage pulses. The emission from ES is effective and nearly exponential with decay time constants of 1.5 and 8 ns at 6 and 300 K, respectively, and is likely dominated by radiative processes. These findings point to a possible route to improved polar device architectures.

引用

页数：6

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