Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells

被引：4

作者：

Tomm, Jens W. ^{[1
]}

Bercha, Artem ^{[2
]}

Muziol, Grzegorz ^{[2
]}

Piprek, Joachim ^{[3
]}

Trzeciakowski, Witold ^{[2
]}

机构：

[1] Max Born Inst, Max Born Str 2A, D-12489 Berlin, Germany

[2] Inst Wysokich Cisnien PAN, Sokolowska 29-37, PL-01142 Warsaw, Poland

[3] NUSOD Inst, Newark, DE 19714 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2023年 / 17卷 / 07期

关键词：

InGaN; GaN; light emitting diode (LED); recombinations; transient photoluminescence; wide quantum wells; LUMINESCENCE;

D O I：

10.1002/pssr.202300027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The analysis of the photoluminescence of polar light emitting diode (LED) structures with a 25 nm In0.17Ga0.83N quantum well is reported. The observed emission most likely originates from a set of energetically close excited states (ES), while the ground state decays only extremely slowly on a mu s-to-ms timescale, that is, long-living charge accumulates there. However, this population can also be quantified spectroscopically by applying short reverse voltage pulses. The emission from ES is effective and nearly exponential with decay time constants of 1.5 and 8 ns at 6 and 300 K, respectively, and is likely dominated by radiative processes. These findings point to a possible route to improved polar device architectures.

引用

页数：6

共 50 条

[11] Phonon Spectrum of Led InGaN/GaN Heterostructure with Quantum Wells
Davydov, V. N.
Lapin, A. N.
Zadorozhny, O. F.
RUSSIAN PHYSICS JOURNAL, 2021, 64 (03) : 534 - 538
[12] Optical transitions and recombination lifetimes in GaN and InGaN epilayers, and InGaN/GaN and GaN/AlGaN multiple quantum wells
Smith, M
Lin, JY
Jiang, HX
Khan, A
Chen, Q
Salvador, A
Botchkarev, A
Morkoc, H
III-V NITRIDES, 1997, 449 : 829 - 834
[13] Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures
Neuschl, B.
Helbing, J.
Thonke, K.
Meisch, T.
Wang, J.
Scholz, F.
JOURNAL OF APPLIED PHYSICS, 2014, 116 (18)
[14] Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Christian, G. M.
Schulz, S.
Rappers, M. J.
Humphreys, C. J.
Oliver, R. A.
Dawson, P.
PHYSICAL REVIEW B, 2018, 98 (15)
[15] Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells
Marona, Lucja
Schiavon, Dario
Baranowski, Michal
Kudrawiec, Robert
Gorczyca, Iza
Kafar, Anna
Perlin, Piotr
SCIENTIFIC REPORTS, 2020, 10 (01)
[16] Theoretical simulations of radiative recombination time in polar InGaN quantum wells
Gladysiewicz, M.
Kudrawiec, R.
Syperek, M.
Misiewicz, J.
Siekacz, M.
Cywinski, G.
Skierbiszewski, C.
Suski, T.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2273 - 2275
[17] Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells
Lucja Marona
Dario Schiavon
Michał Baranowski
Robert Kudrawiec
Iza Gorczyca
Anna Kafar
Piotr Perlin
Scientific Reports, 10
[18] Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells
I. S. Romanov
I. A. Prudaev
V. V. Kopyev
Russian Physics Journal, 2018, 61 : 211 - 215
[19] Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency
I. S. Romanov
I. A. Prudaev
А. А. Marmalyuk
V. A. Kureshov
D. R. Sabitov
А. V. Маzalov
Russian Physics Journal, 2014, 57 : 533 - 535
[20] Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency
Romanov, I. S.
Prudaev, I. A.
Marmalyuk, D. D.
Kureshov, V. A.
Sabitov, D. R.
Mazalov, A. V.
RUSSIAN PHYSICS JOURNAL, 2014, 57 (04) : 533 - 535

← 1 2 3 4 5 →