Studying the Adsorption of Gas Molecules and Defects on Modulating the Electronic Transport Characteristics of Monolayer Penta-BN2-Based Devices

被引:13
作者
Yang, Ning [1 ,2 ]
Chen, Tong [2 ,3 ,4 ]
Xu, Zhonghui [1 ]
Liu, Guogang [1 ,2 ]
Dong, Xiansheng [2 ]
Yu, Yang [2 ]
Xiao, Xianbo [5 ]
机构
[1] Jiangxi Univ Sci & Technol, Sch Software Engn, Nanchang 330013, Peoples R China
[2] Jiangxi Univ Sci & Technol, Energy Mat Comp Ctr, Nanchang 330013, Peoples R China
[3] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[4] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[5] Jiangxi Univ Tradit Chinese Med, Sch Comp Sci, Nanchang 330004, Peoples R China
基金
中国国家自然科学基金;
关键词
TOTAL-ENERGY CALCULATIONS; SENSING PERFORMANCE; GRAPHENE; SENSORS; ALLOTROPE;
D O I
10.1021/acs.langmuir.3c01752
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional atomic layer materials, as an important part of the post-Moore era, have recently become an ideal choice for the preparation of high-efficiency, low-power, and miniaturized gas sensors. In this work, our study utilized density functional theory and the nonequilibrium Green's function method to investigate the electronic properties of the pentagonal BN2 (P-BN2) monolayer, as well as its gas-sensing properties for organic and inorganic gases. We also investigated how defects affect the quantum transport properties of the P-BN2-based device. Our findings demonstrate that the CO, H2S, NH3, SO2, C2H5OH, C3H6OH, CH3OH, and CH4 undergo physisorption on the P-BN2 monolayer, while NO, NO2, C2H2, C2H4, and HCHO undergo chemisorption. Then, we analyzed the impact of gas molecules chemisorbed on the P-BN2 monolayer on the electronic transport properties of the P-BN2-based gas sensor. When these five gas molecules are adsorbed, the current of the P-BN2-based gas sensor is greatly reduced. In addition, the effect of defects on the quantum transport properties of the P-BN2-based device is investigated. The results indicate that defects of N, B, and BN atoms lead to a decrease in the current of P-BN2-based nanodevices. Moreover, both the adsorption of gas molecules and the formation of vacancy defects leading to a decrease in device current can be revealed by the local device density of states near the zero-bias Fermi level, elucidating their microscopic mechanisms. Finally, gas molecules can also cause a decrease in the current of defect systems. These theoretical studies are of great significance for exploring two-dimensional atomic layer materials as high-efficiency gas sensors.
引用
收藏
页码:15507 / 15516
页数:10
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