Fluorine-Doped Tin Oxide Thin Films with High Surface Conductance and Low Transparency for Boosting Performance in Dye-Sensitized Solar Cell Applications
机构:
Univ Peradeniya, Fac Sci, Dept Phys, Peradeniya 20400, Sri Lanka
Univ Peradeniya, Postgrad Inst Sci, Fac Sci, Peradeniya 20400, Sri LankaUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya 20400, Sri Lanka
Wijayaratne, Kapila
[1
,2
]
Kumara, Gamaralalage Rajanya Asoka
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Natl Inst Fundamental Studies, Kandy 20000, Sri LankaUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya 20400, Sri Lanka
Kumara, Gamaralalage Rajanya Asoka
[3
]
de Silva, Landewatte Ajith
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机构:
Univ West Georgia, Dept Phys, Carrollton, GA 30118 USAUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya 20400, Sri Lanka
de Silva, Landewatte Ajith
[4
]
Tennakone, Kirthi
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Natl Inst Fundamental Studies, Kandy 20000, Sri Lanka
Georgia State Univ, Dept Phys, Atlanta, GA 30302 USAUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya 20400, Sri Lanka
Tennakone, Kirthi
[3
,5
]
机构:
[1] Univ Peradeniya, Fac Sci, Dept Phys, Peradeniya 20400, Sri Lanka
[2] Univ Peradeniya, Postgrad Inst Sci, Fac Sci, Peradeniya 20400, Sri Lanka
[3] Natl Inst Fundamental Studies, Kandy 20000, Sri Lanka
[4] Univ West Georgia, Dept Phys, Carrollton, GA 30118 USA
[5] Georgia State Univ, Dept Phys, Atlanta, GA 30302 USA
Transparent conductive oxide films, like fluorine-dopedtin oxide(FTO), are needed for electrochemical devices. FTO films are attractivedue to their cost-effectiveness and high-temperature tolerance. Generally,solar cell fabrication requires high transmittance and low-conductivityFTOs. However, achieving both simultaneously poses a fundamental challenge.This study investigates the impact of FTO layer thickness, sheet resistance,transparency, and film morphology on optimizing the performance ofdye-sensitized solar cells. To achieve this, a precursor solutioncontaining SnCl4 & BULL;5H(2)O and NH4F in isopropanol is sprayed onto a soda-lime glass substrate at 500 & DEG;C to form FTO films. The film thickness is varied by repeatingthe spray cycles. By increasing the number of spray cycles, the sheetresistance of the FTO film improves to & SIM;1.20 & omega; (-1) with the expense of transmittance. The achieved verylow sheet resistance of & SIM;1 & omega; (-1) (& SIM;3.54 x 10(-4)) & omega; cm resistivityfor the FTO film confirms the promise of this sequential spray pyrolysistechnique in preparing highly conductive inert electrodes for variousapplications. Furthermore, DSCs with low transparency and sheet resistanceshowed higher-energy conversion efficiencies, challenging the currentprerequisite of the requirement of high transmittance. The best efficiency(5.14%) is achieved with FTO films having a 34.2% transmittance anda 3.27 & omega; (-1) sheet resistance, outperformingstandard FTO films (4.74%) with a 10 & omega; (-1) sheet resistance and an & SIM;83% transmittance. The results indicatethat the transparency of FTO is not a dominant factor and carefullycontrolled light scattering and electrical properties in translucentFTO films would lead to the realization of dye-sensitized solar cellsthat deliver superior efficiency.
机构:
Univ Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Univ Peradeniya, Fac Sci, Post Grad Inst Sci, Peradeniya, Sri LankaUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Bandara, T. M. W. J.
Aththanayake, A. A. A. P.
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Univ Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Univ Peradeniya, Fac Sci, Post Grad Inst Sci, Peradeniya, Sri LankaUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Aththanayake, A. A. A. P.
Kumara, G. R. A.
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Natl Inst Fundamental Studies, Hantana Rd, Kandy, Sri LankaUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Kumara, G. R. A.
Samarasekara, P.
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Univ Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Univ Peradeniya, Fac Sci, Post Grad Inst Sci, Peradeniya, Sri LankaUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Samarasekara, P.
DeSilva, L. Ajith
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Univ West Georgia, Carrollton, GA USAUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
DeSilva, L. Ajith
Tennakone, K.
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Natl Inst Fundamental Studies, Hantana Rd, Kandy, Sri Lanka
Georgia State Univ, Dept Phys, Atlanta, GA 30303 USAUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Bansal, Shikha
Pandya, Dinesh K.
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Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Pandya, Dinesh K.
Kashyap, Subhash C.
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Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
机构:
Univ Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Univ Peradeniya, Fac Sci, Post Grad Inst Sci, Peradeniya, Sri LankaUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Bandara, T. M. W. J.
Aththanayake, A. A. A. P.
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h-index: 0
机构:
Univ Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Univ Peradeniya, Fac Sci, Post Grad Inst Sci, Peradeniya, Sri LankaUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Aththanayake, A. A. A. P.
Kumara, G. R. A.
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机构:
Natl Inst Fundamental Studies, Hantana Rd, Kandy, Sri LankaUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Kumara, G. R. A.
Samarasekara, P.
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机构:
Univ Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Univ Peradeniya, Fac Sci, Post Grad Inst Sci, Peradeniya, Sri LankaUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
Samarasekara, P.
DeSilva, L. Ajith
论文数: 0引用数: 0
h-index: 0
机构:
Univ West Georgia, Carrollton, GA USAUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
DeSilva, L. Ajith
Tennakone, K.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Inst Fundamental Studies, Hantana Rd, Kandy, Sri Lanka
Georgia State Univ, Dept Phys, Atlanta, GA 30303 USAUniv Peradeniya, Fac Sci, Dept Phys, Peradeniya, Sri Lanka
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Bansal, Shikha
Pandya, Dinesh K.
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h-index: 0
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Pandya, Dinesh K.
Kashyap, Subhash C.
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Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India