Modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-film Transistors

被引：0

作者：

He, Song ^{[1
]}

Li, Haoxin ^{[1
]}

Xu, Guangwei ^{[1
]}

Tang, Xinyi ^{[1
]}

Li, Yuanbiao ^{[1
]}

Kim, Jaewoo ^{[2
]}

Gu, Tingting ^{[2
]}

Xue, Xingkun ^{[2
]}

Li, Zelun ^{[2
]}

Xu, Handong ^{[2
]}

Dong, Haiyang ^{[2
]}

Zhou, Kai ^{[1
]}

Hu, Xianqin ^{[1
,2
]}

Long, Shibing ^{[1
]}

机构：

[1] Univ Sci & Technol China, Sch Microelect, Hefei 230026, Peoples R China

[2] Changxin Memory Technol Inc, Hefei 230601, Peoples R China

来源：

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年

关键词：

IGZO; 2T0C DRAM; stacked memory array self-heating; TCAD simulation;

D O I：

10.23919/SISPAD57422.2023.10319553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, the electrothermal characteristics of the stacked 2T0C memory array were modeled based on the material properties, electron transport mechanism of InGaZnO4 (IGZO) and basic Fourier heat flow equation utilizing the technology computer-aided design (TCAD) tool. According to the proposed electrothermal model, the multi-layer stacked 2T0C memory array would bring severe self-heating issue from the thermal crosstalk among layers. The temperature rising of stacked 2T0C cells decrease the retention time severely due to the temperature instability of IGZO thin-film transistors TFTs. Furthermore, several advanced device-level strategies were proposed to ameliorate the heat accumulation problem.

引用

页码：17 / 20

页数：4

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