Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory

被引：0

作者：

Chang, Ting-Yu ^{[1
]}

Wang, Kuan-Chi ^{[1
]}

Liu, Hsien-Yang ^{[2
]}

Hseun, Jing-Hua ^{[3
]}

Peng, Wei-Cheng ^{[1
]}

Ronchi, Nicolo ^{[4
]}

Celano, Umberto ^{[4
,5
]}

Banerjee, Kaustuv ^{[4
]}

Van Houdt, Jan ^{[4
,6
]}

Wu, Tian-Li ^{[1
,2
,3
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan

[2] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[3] Natl Yang Ming Chiao Tung Univ, Inst Pioneer Semicond Innovat, Hsinchu 30010, Taiwan

[4] Imec, B-3000 Leuven, Belgium

[5] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[6] Katholieke Univ Leuven, Dept Phys & Astron, B-3000 Leuven, Belgium

来源：

NANOMATERIALS | 2023年 / 13卷 / 14期

关键词：

ferroelectric; domain size; reliability; TRANSISTORS;

D O I：

10.3390/nano13142104

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si) (Sample B). Firstly, Y-doped and Si-doped HfO2 MFM devices exhibit domain sizes of 5.64 nm and 12.47 nm, respectively. Secondly, Si-doped HfO2 MFM devices (Sample B) have better CVS time-dependent breakdown and cycle-to-breakdown stability than Y-doped HfO2 MFM devices (Sample A). Therefore, a larger domain size showing higher extrapolated voltage under CVS time-dependent breakdown and cycle-to-breakdown evaluations was observed, indicating that the domain size crucially impacts the stability of MFM memory.

引用

页数：9