Boosting Thermal Conductivity by Surface Plasmon Polaritons Propagating along a Thin Ti Film

被引：13

作者：

Kim, Dong-min ^{[1
,2
]}

Choi, Sinwoo ^{[1
,2
]}

Cho, Jungwan ^{[3
]}

Lim, Mikyung ^{[4
]}

Lee, Bong Jae ^{[1
,2
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mech Engn, Daejeon 34141, South Korea

[2] Korea Adv Inst Sci & Technol, Ctr Extreme Thermal Phys & Mfg, Daejeon 34141, South Korea

[3] Sungkyunkwan Univ, Sch Mech Engn, Suwon 16419, South Korea

[4] Korea Inst Machinery & Mat, Nanoconvergence Mfg Syst Res Div, Daejeon 34103, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2023年 / 130卷 / 17期

基金：

新加坡国家研究基金会;

关键词：

RADIATIVE HEAT-TRANSFER; FIELD THERMOPHOTOVOLTAIC SYSTEM; SILICON;

D O I：

10.1103/PhysRevLett.130.176302

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We experimentally demonstrate boosted in-plane thermal conduction by surface plasmon polaritons (SPPs) propagating along a thin Ti film on a glass substrate. Due to the lossy nature of metal, SPPs can propagate over centimeter-scale distances even along a supported metal film, and the resulting ballistic heat conduction can be quantitatively validated. Further, for a 100-nm-thick Ti film on a glass substrate, a significant enhancement of in-plane thermal conductivity compared to bulk value (similar to 25%) is experimentally shown. This Letter will provide a new avenue to employ SPPs for heat dissipation along a supported thin film, which can be readily applied to mitigate hot-spot issues in microelectronics.

引用

页数：6

共 22 条

[21] Surface-Plasmon-Enhanced Near-Field Radiative Heat Transfer between Planar Surfaces with a Thin-Film Plasmonic Coupler
Lim, Mikyung
Song, Jaeman
Lee, Seung S.
Lee, Jungchul
Lee, Bong Jae
PHYSICAL REVIEW APPLIED, 2020, 14 (01):
[22] Hydrogen plasma and thermal annealing treatments on a-Si:H thin film for c-Si surface passivation
Serenelli, Luca
Chierchia, Rosa
Izzi, Massimo
Tucci, Mario
Martini, Luca
Caputo, Domenico
Asquini, Rita
de Cesare, Giampiero
ADVANCED MATERIALS AND CHARACTERIZATION TECHNIQUES FOR SOLAR CELLS II, 2014, 60 : 102 - 108

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