Tuning Surface Oxidation States of Nickel Oxide for Efficient Inverted Perovskite Solar Cells

被引:9
作者
Yang, Man [1 ]
Zhu, Xueliang [1 ]
Mo, Kangwei [1 ]
Li, Sheng [1 ]
Cheng, Siyang [1 ]
Liu, Yong [1 ]
Yan, Ning [1 ,2 ]
Wang, Zhiping [1 ,3 ,4 ]
机构
[1] Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ China, Wuhan 430072, Peoples R China
[2] Univ Amsterdam, Vant Hoff Inst Mol Sci HIMS, NL-1098 XH Amsterdam, Netherlands
[3] Hubei Luojia Lab, Wuhan 430072, Peoples R China
[4] Wuhan Inst Quantum Technol, Wuhan 430206, Peoples R China
关键词
inverted solar cell; nickel oxide; perovskites; surface state; interface engineering; PERFORMANCE; INTERFACES; STABILITY; LAYERS;
D O I
10.1021/acsaem.2c03072
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nickel oxide (NiOx), as an inorganic p-type semiconductor, has been widely adopted as hole-transporting layers in perovskite solar cells. Despite its superior material stability, the poor charge extraction and multi-vacancies greatly restrict the photovoltages and efficiencies. Here, we propose a facile method to tune the surface oxidation states of NiOx films by a lithium salt treatment for photovoltage enhancement. X-ray photoelectron spectroscopy measurement indicates that the lithium treatment only reduces the Ni3+ sites at the top region rather than in the bulk of NiOx films. This graded distribution allows more efficient charge extraction at the NiOx/perovskite interface as revealed by photoluminescence studies. Through a combination of capacitance- voltage and drive-level capacitance profiling measurements, we confirm enhanced built-in potentials and decreased interface defect densities in lithium-modified devices. Further modifying the interface with a self-assembly monolayer, the energy offsets at the interface can be largely reduced. Based on these enhanced properties, the modified devices achieve a high-power conversion efficiency of 22.4% (0.07 cm2) with a 120 mV enhancement in photovoltage in comparison with the untreated devices.
引用
收藏
页码:1332 / 1339
页数:8
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