Ni/Au contacts to corundum α-Ga2O3

The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited alpha-Ga2O3 were investigated. Ni forms a Schottky contact with alpha-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unlike what is observed for other metals like Ti), and instead, the metallurgical processes of the Ni-Au bilayer dominate the electrical properties. It is found that 400 degrees C-450 degrees C is the optimal annealing temperature, which allows for metal diffusion to heal gaps at the metal/semiconductor interface, but is not sufficient for Ni and Au to significantly interdiffuse and form an alloy with compositional inhomogeneities.