Spintronic devices based on topological and two-dimensional materials

被引:2
作者
Jiang, Long-Xing [1 ,2 ]
Li, Qing-Chao [2 ,3 ]
Xu, Zhang [2 ]
Li, Jing-Feng [2 ]
Jing, Zhang [2 ]
Zu-Xin, Chen [1 ]
Min, Zeng [3 ]
Hao, Wu [2 ]
机构
[1] South China Normal Univ, Sch Semicond Sci & Technol, Guangzhou 510631, Peoples R China
[2] Songshan Lake Mat Lab, Dongguan 523808, Peoples R China
[3] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
基金
中国国家自然科学基金;
关键词
spintronic devices; topological materials; two-dimensional materials; all van-der-Waals heterostructures; SPIN-ORBIT TORQUE; VAN; TEMPERATURE; MONOLAYER; HETEROSTRUCTURES; FERROMAGNETISM; TRANSITION; SURFACE;
D O I
10.7498/aps.73.20231166
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Novel quantum materials such as topological materials, two-dimensional materials, create new opportunities for the spintronic devices. These materials can improve the charge -spin conversion efficiency, provide highquality interface, and enhance the energy efficiency for spintronic devices. In addition, they have rich interactions and coupling effects, which provides a perfect platform for finding new physics and novel methods to control the spintronic properties. Many inspiring results have been reported regarding the research on topological materials and two-dimensional materials, especially the layered topological and two-dimensional magnetic materials, and their heterostructures. This paper reviews the recent achievements of these novel quantum materials on spintronic applications. Firstly the breakthroughs that topological materials have been made in spin -orbit torque devices is introduced, then two-dimensional magnetic materials and their performances in spintronic devices are presented, finally the research progress of topological materials/two-dimensional magnetic materials heterostructures is discussed. This review can help to get a comprehensive understanding of the development of these novel quantum materials in the field of spintronics and inspire new ideas of research on these novel materials.
引用
收藏
页数:14
相关论文
共 97 条
[21]   Topological insulator: Spintronics and quantum computations [J].
He, Mengyun ;
Sun, Huimin ;
He, Qing Lin .
FRONTIERS OF PHYSICS, 2019, 14 (04)
[22]   Electrical control of 2D magnetism in bilayer CrI3 [J].
Huang, Bevin ;
Clark, Genevieve ;
Klein, Dahlia R. ;
MacNeill, David ;
Navarro-Moratalla, Efren ;
Seyler, Kyle L. ;
Wilson, Nathan ;
McGuire, Michael A. ;
Cobden, David H. ;
Xiao, Di ;
Yao, Wang ;
Jarillo-Herrero, Pablo ;
Xu, Xiaodong .
NATURE NANOTECHNOLOGY, 2018, 13 (07) :544-+
[23]   Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit [J].
Huang, Bevin ;
Clark, Genevieve ;
Navarro-Moratalla, Efren ;
Klein, Dahlia R. ;
Cheng, Ran ;
Seyler, Kyle L. ;
Zhong, Ding ;
Schmidgall, Emma ;
McGuire, Michael A. ;
Cobden, David H. ;
Yao, Wang ;
Xiao, Di ;
Jarillo-Herrero, Pablo ;
Xu, Xiaodong .
NATURE, 2017, 546 (7657) :270-+
[24]   Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin-Orbit Coupling of Topological Insulator Bi2Se3 [J].
Jamali, Mandi ;
Lee, Joon Sue ;
Jeong, Jong Seok ;
Mahfouzi, Farzad ;
Lv, Yang ;
Zhao, Zhengyang ;
Nikolic, Branislav K. ;
Mkhoyan, K. Andre ;
Samarth, Nitin ;
Wang, Jian-Ping .
NANO LETTERS, 2015, 15 (10) :7126-7132
[25]   Controlling magnetism in 2D CrI3 by electrostatic doping [J].
Jiang, Shengwei ;
Li, Lizhong ;
Wang, Zefang ;
Mak, Kin Fai ;
Shan, Jie .
NATURE NANOTECHNOLOGY, 2018, 13 (07) :549-+
[26]   Electric-field switching of two-dimensional van der Waals magnets [J].
Jiang, Shengwei ;
Shan, Jie ;
Mak, Kin Fai .
NATURE MATERIALS, 2018, 17 (05) :406-+
[27]   Deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe2 [J].
Kao, I-Hsuan ;
Muzzio, Ryan ;
Zhang, Hantao ;
Zhu, Menglin ;
Gobbo, Jacob ;
Yuan, Sean ;
Weber, Daniel ;
Rao, Rahul ;
Li, Jiahan ;
Edgar, James H. ;
Goldberger, Joshua E. ;
Yan, Jiaqiang ;
Mandrus, David G. ;
Hwang, Jinwoo ;
Cheng, Ran ;
Katoch, Jyoti ;
Singh, Simranjeet .
NATURE MATERIALS, 2022, 21 (09) :1029-+
[28]  
Kim J, 2013, NAT MATER, V12, P240, DOI [10.1038/NMAT3522, 10.1038/nmat3522]
[29]  
Kondou K, 2016, NAT PHYS, V12, P1027, DOI [10.1038/nphys3833, 10.1038/NPHYS3833]
[30]   Large enhancement of the spin Hall effect in Au by side-jump scattering on Ta impurities [J].
Laczkowski, P. ;
Fu, Y. ;
Yang, H. ;
Rojas-Sanchez, J. -C. ;
Noel, P. ;
Pham, V. T. ;
Zahnd, G. ;
Deranlot, C. ;
Collin, S. ;
Bouard, C. ;
Warin, P. ;
Maurel, V. ;
Chshiev, M. ;
Marty, A. ;
Attane, J. -P. ;
Fert, A. ;
Jaffres, H. ;
Vila, L. ;
George, J. -M. .
PHYSICAL REVIEW B, 2017, 96 (14)