Design and Analysis of Junctionless-Based Gate All Around N plus Doped Layer Nanowire TFET Biosensor

This work is based on the analysis and designing of Gate All Around N+ doped layer Nanowire Tunnel Field Effect Transistors (NTFET) without junctions for application in biosensor by considering the various bio molecules like uricase, proteins, biotin, streptavidin, Aminopropyl-triethoxy-silane (ATS) and many more with dielectric modulation technique and gate-all-around (GAA) environment. Device sensitivity and tunneling probability is further improved by N+ doped layer (1 x 1020 cm-3). The change in the subthreshold-slope (SS), drain current (ID), transconductance(gm), and ratio of ION/IOFF has been examined to detect the sensitivity of the proposed device by confining various biomolecules in the area of nanocavity. The nanocavity area creates a shield in the source gate of oxide layer and electrodes metal. The Junctionless Gate All Around Nanowire Tunnel-Field-Effect-Transistor (JLGAA-NTFET) shows less leakage current and large control on the channel. The design of JLGAA-NTFET is with high doping concentration and observed higher sensitivity for ATS biomolecule which is suitable for sensor design application. Design and analysis of Junctionless based Gate-All-Around N+ doped layer Nanowire tunnel-field-effect-transistor (JLGAA-NTFET) for biosensor application.Various biomolecules such as uricase, streptavidin, protein, biotin, Uriease, Amino-propyl triethoxysilane (ATS) are used during simulation.The N+ doped layer is installed to improve the tunneling probability of the device which further enhances the device sensitivity.The nanocavity area is created a layer in sandwiched between the oxide layer of source-gate and electrodes metal of source-gate.The JLGAA-NTFET shows the reduced leakage currents in terms of short-channel-effects (SCEs) and superior controllability over the channel.