Sensitivity of Transition-Edge Sensors to Strong DC Electric Fields

被引:1
作者
Patel, K. M. [1 ]
Goldie, D. J. [1 ]
Withington, S. [2 ]
Thomas, C. N. [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
[2] Univ Oxford, Dept Phys, Oxford OX1 3PU, England
来源
SPIE FUTURE SENSING TECHNOLOGIES 2023 | 2023年 / 12327卷
基金
芬兰科学院; 英国工程与自然科学研究理事会;
关键词
Transition-edge sensors; electric field; superconductivity; particle detection;
D O I
10.1117/12.2666646
中图分类号
TP7 [遥感技术];
学科分类号
081102 ; 0816 ; 081602 ; 083002 ; 1404 ;
摘要
Transition-edge sensors (TESs) have found a wide range of applications in both space- and land-based astronomical photon measurement and are being used in the search for dark matter and neutrino mass measurements. A fundamental aspect of TES physics that has not been investigated is the sensitivity of TESs to strong DC electric fields (10 kVm(-1) and above). Understanding the resilience of TESs to DC electric fields is essential when considering their use as charged particle spectrometers, a field in which TESs could have an enormous impact. Techniques such as x-ray photoelectron spectroscopy produce a high number of low-energy electrons that are not of interest and can be screened from the detector using electrostatic deflection. The use of strong electric fields could also provide a mass-efficient route to prevent secondary electron measurements arising from cosmic radiation in space-based TES applications. Integrating electron optics into the TES membrane provides an elegant and compact means to control the interaction between charged particles and the sensor, whether by screening unwanted particles or enhancing the particle absorption efficiency but implementing such techniques requires understanding the sensitivity of the TES to the resulting electric fields. In this work, we applied a uniform DC electric field across a Mo/Au TES using a parallel pair of flat electrodes positioned above and below the TES. The electric field in the vicinity of the TES was enhanced by the presence of silicon backing plate directly beneath the TES. Using this arrangement, we were able to apply of electric fields up to 90 kVm(-1) across the TES. We observed no electric field sensitivity at any field strength demonstrating the capability to use TESs in environments of strong electric fields.
引用
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页数:6
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