Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film

被引：9

作者：

Lee, Dong Hyun ^{[1
]}

Park, Geun Hyeong ^{[1
]}

Kim, Se Hyun ^{[1
]}

Yang, Kun ^{[1
]}

Lee, Jaewook ^{[1
]}

Choi, Hyojun ^{[1
]}

Lee, Younghwan ^{[2
]}

Ryu, Jin Ju ^{[3
,4
]}

Lee, Je In ^{[5
]}

Kim, Gun Hwan ^{[3
,6
]}

Park, Min Hyuk ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

[2] Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea

[3] Korea Res Inst Chem Technol KRICT, Div Adv Mat, Daejeon 34114, South Korea

[4] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea

[5] Pusan Natl Univ, Sch Mat Sci & Engn, Busan 46241, South Korea

[6] Yonsei Univ, Sch Syst & Semicond Engn, Seoul 03722, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Switches; Electrodes; Kinetic theory; Tin; Capacitors; Pulse measurements; Grain size; Ferroelectrics; Hafnium zirconium oxide; ferroelectric memory; domain dynamics;

D O I：

10.1109/LED.2023.3294522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrode materials can significantly impact the chemical and physical properties and polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 (HZO) films deposited through atomic layer deposition. In this study, the effect of various electrode materials (TiN, Mo, and W) on the microstructure and polarization switching properties of HZO films is investigated. The nucleation-limited switching model indicates that the Mo electrode is beneficial in the case of small device-to-device variation, whereas W and TiN electrodes are advantageous for accomplishing high-speed operations.

引用

页码：1440 / 1443

页数：4

共 27 条

[1] Emergent ferroelectricity in subnanometer binary oxide films on silicon [J].

Cheema, Suraj S. ;

Shanker, Nirmaan ;

Hsu, Shang-Lin ;

Rho, Yoonsoo ;

Hsu, Cheng-Hsiang ;

Stoica, Vladimir A. ;

Zhang, Zhan ;

Freeland, John W. ;

Shafer, Padraic ;

Grigoropoulos, Costas P. ;

Ciston, Jim ;

Salahuddin, Sayeef .

SCIENCE, 2022, 376 (6593) :648-+

[2]

DEVONSHIRE AF, 1949, PHILOS MAG, V40, P1040

[3]

GINSBURG V, 1945, ZH EKSP TEOR FIZ+, V15, P739

[4] Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization [J].

Goh, Youngin ;

Hwang, Junghyeon ;

Lee, Yongsun ;

Kim, Minki ;

Jeon, Sanghun .

APPLIED PHYSICS LETTERS, 2020, 117 (24)

[5] Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO2 Electrode [J].

Goh, Youngin ;

Cho, Sung Hyun ;

Park, Sang-Hee Ko ;

Jeon, Sanghun .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) :3431-3434

[6] Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode [J].

Goh, Youngin ;

Cho, Sung Hyun ;

Park, Sang-Hee Ko ;

Jeon, Sanghun .

NANOSCALE, 2020, 12 (16) :9024-9031

[7] Universal Ferroelectric Switching Dynamics of Vinylidene Fluoride-trifluoroethylene Copolymer Films [J].

Hu, Wei Jin ;

Juo, Deng-Ming ;

You, Lu ;

Wang, Junling ;

Chen, Yi-Chun ;

Chu, Ying-Hao ;

Wu, Tom .

SCIENTIFIC REPORTS, 2014, 4

[8] Nonlinear Dynamics of Domain-Wall Propagation in Epitaxial Ferroelectric Thin Films [J].

Jo, J. Y. ;

Yang, S. M. ;

Kim, T. H. ;

Lee, H. N. ;

Yoon, J. -G. ;

Park, S. ;

Jo, Y. ;

Jung, M. H. ;

Noh, T. W. .

PHYSICAL REVIEW LETTERS, 2009, 102 (04)

[9] Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering [J].

Kashir, Alireza ;

Kim, Hyungwoo ;

Oh, Seungyeol ;

Hwang, Hyunsang .

ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (02) :629-638

[10] THICKNESS DEPENDENCE OF NUCLEATION FIELD OF TRIGLYCINE SULPHATE [J].

KAY, HF ;

DUNN, JW .

PHILOSOPHICAL MAGAZINE, 1962, 7 (84) :2027-&

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