Detailed analysis of the electrical and photovoltaic characteristics of Al/Cu2ZnGeSe4/n-Si/Ag heterojunction

P-type Cu2ZnGeSe4 (CZGSe(4)) films were created on an n-type Silicon wafer using a thermal evaporation approach, resulting in the development of Al/Cu2ZnGeSe(4)/n-Si/Ag heterojunction. The CZGSe(4) thin films have a tetragonal phase according to the XRD data. The dark current-voltage curve of the investigated heterojunction established good rectifying characteristics. The analysis of the ideality factor for the investigated heterojunction indicates that the computed values of the ideality factor (n) were more than unity and reduced by boosting the annealing temperature. On the other hand, boosting the annealing temperature improves the effective barrier height values. Furthermore, the photovoltaic parameters of the investigated heterojunction, like the open-circuit voltage (V-OC), solar efficiency (eta), and the fill factor, were assessed from the illuminated current-voltage curve. Meanwhile, the capacitance-voltage estimates of the CZGSe(4)/n-Si heterojunction show that the junction's performance is abrupt.