Investigating the Performance of a Lateral 4H-SiC Photoconductive Switch With a Sinking-Electrode Structure

被引：1

作者：

Qin, Yan ^{[1
]}

Luan, Chongbiao ^{[1
]}

Xiao, Longfei ^{[2
,3
]}

Li, Yangfan ^{[2
,3
]}

Feng, Zhuoyun ^{[2
,3
]}

Sha, Huiru ^{[2
,3
]}

Sun, Xun ^{[2
,3
]}

Jiao, Jian ^{[2
,3
]}

Li, Hongtao ^{[1
,2
]}

机构：

[1] China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Sichuan, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[3] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 01期

关键词：

Peak field strength; photoconductive semiconductor switch (PCSS); quantum efficiency; SiC material; sinking-electrode structure; HIGH-POWER;

D O I：

10.1109/TED.2023.3335915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lateral PCSS with a sinking-electrode structure was proposed in this work. Silvaco TCAD was used to simulate the electric field distribution of the switches with different groove etching depths. The simulation results show that the internal peak electric field and external quantum efficiency (EQE) of a sinking-electrode PCSS with a 1 mm gap were 61% and 270% of the conventional switch, respectively. A 355 nm YAG laser with a dc high voltage source was also used to test the sinking-electrode switches with different electrode gaps. The sinking-electrode switch with a small electrode gap achieved the same breakdown voltage value with higher current and quantum efficiency compared to the conventional switch with a large gap. The acquired experimental results were in good agreement with the simulated outcomes, and the good ON-state performance confirmed the improved photoelectric conversion efficiency and high voltage resistance of the introduced sinking-electrode PCSSs.

引用

页码：727 / 732

页数：6