Green Laser Crystallized Poly-Si Thin-film Transistor and CMOS Inverter using HfO2-ZrO2 Superlattice Gate Insulator and Microwave Annealing for BEOL Applications

被引：1

作者：

Chang, Chih-Hsiang ^{[1
]}

Yan, Siao-Cheng ^{[1
]}

Sun, Chong-Jhe ^{[1
]}

Huang, Ming-Yueh ^{[1
]}

Chen, Bo-An ^{[1
]}

Zhong, Xin-Chan ^{[1
]}

Lin, Yi-Wen ^{[1
]}

Wu, Yung-Chun ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan

来源：

2023 SILICON NANOELECTRONICS WORKSHOP, SNW | 2023年

关键词：

D O I：

10.23919/SNW57900.2023.10183972

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

We report the BEOL compatible poly-Si thin-film transistor (TFT) below 400 degrees C by green laser crystallization and microwave annealing. The TEM image reveals the HfO2-ZrO2 superlattice (SL-HZO) structure of the dielectric layer. The p-type device shows good electrical properties, including I-ON/I-OFF ratio > 10(6), subthreshold swing (SS) = 75 mV/dec, and low DIBL = 24.18 mV/V. Furthermore, we demonstrate the characteristics of the CMOS inverter and the voltage transfer curve (VTC) indicates the acceptable voltage gain.

引用

页码：31 / 32

页数：2