An Active Reflection Phase Shifter with High Gain for Reconfigurable Reflectarrays above 0.24 THz

被引:1
|
作者
Kunakovskaya, Ekaterina [1 ]
Ulusoy, Ahmet Cagri [1 ]
机构
[1] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect, Karlsruhe, Germany
关键词
millimeter wave integrated circuits; phase shifters; reflection amplifier silicon germanium; heterojunction bipolar transistors; phased arrays;
D O I
10.1109/SiRF56960.2023.10046266
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a high frequency, high gain reflection-type phase shifter based on a reflection amplifier topology. A transistor switch within the amplifier acts as the phase-shifting part that can be digitally controlled and provides 1-bit phase resolution. The fabricated phase shifter is implemented in 0.13 mu m SiGe HBT technology, and the measured results show a reflection gain of 10.2/10.9 dB in two operational states with a phase change of 179 degrees at 257.5 GHz. The phase-shifter core occupies only 0.007 mm(2) of IC area.
引用
收藏
页码:41 / 43
页数:3
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