Study on the electronic structures and optical properties of Ca-doped KH2PO4 crystal

被引:6
作者
Zhao, Longfeng [1 ]
Liu, Tingyu [1 ]
Hu, Hao [1 ]
Zhu, Jiachen [1 ]
机构
[1] Univ Shanghai Sci & Technol, Coll Sci, 516 Jungong Rd, Shanghai 200093, Peoples R China
来源
MATERIALS TODAY COMMUNICATIONS | 2023年 / 37卷
关键词
DFT; Point defects; Electronic structures; Optical properties; Defect formation energy; 1ST-PRINCIPLES CALCULATIONS; KDP; GROWTH; DEFECTS; CENTERS; IONS;
D O I
10.1016/j.mtcomm.2023.107492
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The first-principles method has been used to investigate the impact of Ca substitution at K sites on the electrical structures and optical characteristics of KH2PO4 crystals. And we use the FNV correction approach for the finitesize system and the HSE06 hybrid functional to update the defect formation energy and fix the "band-edge" issue. The results of defect formation energy indicate that the defect CaKGreek ano teleia is the easiest to form. Crystal properties may be more susceptible to damage. The valence band maximum (VBM) of CaKx is shifted downward and the conduction band minimum (CBM) is shifted downward. The VBM of CaKGreek ano teleia and CaKGreek ano teleiaGreek ano teleia is slightly shifted upward, and CBM is almost unchanged. But Ca-induced defect energy levels are responsible for bandgap reduction and conduction band bottom shift. The absorption peaks of PE-KDP and FE-KDP occur at 1.1 eV and 2.05 eV, respectively, when the electron transitions between the defect transition level and CBM. Conversely, the absorption maxima are located at 6.5 eV and 5.4 eV, correspondingly, when the electron makes a jump between the defect transition level and VBM. Stokes redshifts are 0.3 and 0.9 eV. It damages the crystal and lowers the irradiation resistance threshold by generating vibrational energy in the lattice. Avoid CaK for better KDP quality.
引用
收藏
页数:9
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