Ferroelectric YAlN grown by molecular beam epitaxy

被引：28

作者：

Wang, Ding ^{[1
]}

Mondal, Shubham ^{[1
]}

Liu, Jiangnan ^{[1
]}

Hu, Mingtao ^{[1
]}

Wang, Ping ^{[1
]}

Yang, Samuel ^{[1
]}

Wang, Danhao ^{[1
]}

Xiao, Yixin ^{[1
]}

Wu, Yuanpeng ^{[1
]}

Ma, Tao ^{[2
]}

Mi, Zetian ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Michigan Ctr Mat Characterizat MC 2, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 03期

基金：

美国国家科学基金会;

关键词：

701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 741.3 Optical Devices and Systems - 804.1 Organic Compounds - 804.2 Inorganic Compounds - 931.3 Atomic and Molecular Physics - 933.1.2 Crystal Growth;

D O I：

10.1063/5.0159562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the demonstration of ferroelectric switching in yttrium (Y)-doped nitride semiconductors. In this study, single-crystalline, wurtzite Y0.07Al0.93N films were epitaxially grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The ferroelectric switching process has been investigated by current density-electric field (J-E) and polarization-electric field (P-E) loops as well as positive-up-negative-down measurements, showing a coercive field of similar to 6 MV/cm and a switchable polarization of similar to 130 mu C/cm(2). Ferroelectric switching was further confirmed via butterfly shape capacitance-voltage (C-V) loops and polarity-sensitive wet etching. The realization of ferroelectric, Y-doped AlN films further extends the family of nitride ferroelectrics and unravels a wealth of intriguing opportunities in III-nitride based electronic, piezo-electronic, and optoelectronic devices.

引用

页数：6

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