Facile fabrication of ultra-light N-doped-rGO/g-C3N4 for broadband microwave absorption

"Thin thickness", "lightweight", "wide absorption bandwidth" and "strong absorption" are the new standards of contemporary science and technology for microwave absorption(MA) material. In this study, N-doped-rGO/g-C3N4 MA material was prepared for the first time by simple heat treatment, which the N atoms were doped into rGO and g-C3N4 was dispersed on the surface of N-doped-rGO, and its density is only 0.035 g/cm3. The impedance matching of the N-doped-rGO/g-C3N4 composite was well adjusted by decreasing the dielectric constant and attenuation constant due to the g-C3N4 semiconductor property and the graphite-like structure. Moreover, the distribution of g-C3N4 among N-doped-rGO sheets can produce more polarization effect and relaxation effect by increasing the lamellar spacing. Furthermore, the polarization loss of N-doped-rGO/g-C3N4 could be increased successfully by doping N atoms and g-C3N4. Ultimately, the MA property of N-doped-rGO/g-C3N4 composite was optimized significantly, with a loading of 5 wt%, the N-doped-rGO/g-C3N4 composite exhibited the RLmin of-49.59 dB and the effective absorption bandwidth could reach 4.56 GHz when the thickness was only 1.6 mm. The "thin thickness", "lightweight", "wide absorption bandwidth" and "strong ab-sorption" of MA material are actually achieved by the N-doped-rGO/g-C3N4.