Neuronal Function and Signal Amplification Device with Steep Switching "PN-Body Tied SOI-FET"

被引：1

作者：

Mori, Takayuki ^{[1
]}

Ida, Jiro ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Nonoichi, Ishikawa, Japan

来源：

2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT | 2023年

关键词：

D O I：

10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A neuronal function device with a "PN-body tied (PNBT) silicon-on-insulator field-effect transistor (SOI-FET)" was demonstrated. We found out that the PNBT SOI-FET has the integrate-and-fire neuron function without a reset circuit and signal amplification ability.

引用

页数：2

共 24 条

[21] Confirmation of SS=35μV/dec over 3 Decades of Drain Current and Hole Accumulation Effect on PN-Body Tied SOI Super Steep SS FET's
Horii, Takashi
Ida, Jiro
Yoshida, Takahiro
Okihara, Masao
Arai, Yasuo
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2016, : 148 - 149
[22] Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off
Mori, Takayuki
Ida, Jiro
Endo, Hiroki
Arai, Yasuo
2019 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2019), 2019, : 291 - 294
[23] Control of Hysteresis and Latch-up on Steep Switching "PN-Body Tied SOIFET Diode" by Ar-Ion Implantation
Matsushita, Hiroyoshi
Mori, Takayuki
Ida, Jiro
2024 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI TSA, 2024,
[24] Optimizing MOS-gated thyristor using voltage-based equivalent circuit model for designing steep-subthreshold-slope PN-body-tied silicon-on-insulator FET
Ueda, Daiki
Takeuchi, Kiyoshi
Kobayashi, Masaharu
Hiramoto, Toshiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)

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