Neuronal Function and Signal Amplification Device with Steep Switching "PN-Body Tied SOI-FET"

被引：1
作者：
Mori, Takayuki [1 ]
Ida, Jiro [1 ]
机构：
[1] Kanazawa Inst Technol, Nonoichi, Ishikawa, Japan
来源：
2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT | 2023年
关键词：
D O I：
10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134222
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A neuronal function device with a "PN-body tied (PNBT) silicon-on-insulator field-effect transistor (SOI-FET)" was demonstrated. We found out that the PNBT SOI-FET has the integrate-and-fire neuron function without a reset circuit and signal amplification ability.
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页数：2
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