Tuning the band gap edges of perovskite material by Cd doping for achieving high current density in perovskite solar cells

被引:31
作者
Attia, A. [1 ]
Hussain, Saddam [2 ]
Khan, M. I. [2 ]
Sadaf, Asma [3 ]
Seliem, Amal F. [1 ]
Mohammed, Ayeda Y. A. [1 ]
Ibrahim, Mohamed M. [4 ]
机构
[1] Najran Univ, Fac Sci & Arts, Dept Chem, Najran, Saudi Arabia
[2] Univ Lahore, Dept Phys, Lahore 53700, Pakistan
[3] Punjab Tianjin Univ, Lahore, Pakistan
[4] Taif Univ, Coll Sci, Dept Chem, POB 11099, Taif 21944, Saudi Arabia
关键词
MAPbBr3; Cd; Doping; Perovskite solar cells; THIN-FILMS; CARRIER DYNAMICS; ZNO;
D O I
10.1016/j.ceramint.2023.03.176
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Defect-free perovskite materials are necessary for developing efficient solar cells. On FTO-glass substrates (0%, 3%, and 6%), cadmium-doped methylammonium lead bromide (Cd-MAPbBr3) films have been deposited. Doping does not affect the cubic crystal structure of MAPbBr3; however, it has increased the grain size, according to XRD. The band gap is decreased at 3% of Cd doping, due to which the deep-level traps are decreased. Every cell shows good performance, but the cell formed with 3% Cd doping has a high fill factor (0.81), open circuit voltage (1.04 V), considerable short-circuit current density (7.2 mA/cm2), and efficiency (6.05%). The high open circuit voltages and current density refer to the accumulation of charges at the holes and electrons transport layers being reduced due to Cd doping.
引用
收藏
页码:20465 / 20469
页数:5
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