New Power Clamp Circuit for Concurrent ESD and Surge Protections

被引：5
作者：
Yang, Zhaonian [1 ]
Xu, Jinghao [1 ]
Fu, Dongbing [2 ]
Zhang, Yan [1 ,3 ]
Zhang, Yue
Yang, Yuan [1 ]
Yu, Ningmei [1 ]
机构：
[1] Xian Univ Technol, Shaanxi Key Lab Complex Syst Control & Intelligent, Xian 710048, Peoples R China
[2] Chongqing Gigachip Technol Co Ltd, Chongqing 401332, Peoples R China
[3] Xidian Univ, Sch Telecommun Engn, Xian 710071, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Clamp circuit; diode string; electrostatic discharge (ESD); leakage current; surge; trigger voltage;
D O I：
10.1109/TED.2023.3296071
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An important development trend of ON-chip power clamp circuits is that they should be able to deal with more types of power rail overstress events, such as electrostatic discharges (ESDs) and surges. Generally, this requires that the clamp circuit can be fully turned on for the whole duration of the overstress events. In this work, a new MOSFET-based power clamp circuit for concurrent ESD and surge protection is proposed and successfully validated experimentally. An MOSFET controlled by a special bias circuit is inserted into a traditional voltage detector consisting of a diode string and a resistor, resulting in reductions in the leakage current and the trigger voltage. Moreover, the layout area of the proposed clamp circuit is smaller than the traditional RC-and diode-triggered clamp circuits. Practical application scenarios and performance comparisons with traditional circuits are also presented.
引用
收藏
页码：4538 / 4546
页数：9
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